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Published April 1988 | Version Published
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Simulation of GaAs p-i-n diodes

Creators

  • 1. ROR icon MIT Lincoln Laboratory

Abstract

GaAs p-i-n diodes have been modeled using numerical simulation, and the theoretical results have been compared to those of experiment. The simulations predict that with a lifetime of the carriers of 10^(-7)s, devices that have good i-layer modulation may be built. This is in agreement with currently available commercial devices.

Additional Information

© 1988 IEEE. Manuscript received August, 24, 1987; revised November 17, 1987. This work was sponsored by the Department of the Army.

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Additional details

Identifiers

Eprint ID
93723
Resolver ID
CaltechAUTHORS:20190312-090512320

Funding

U.S. Army

Dates

Created
2019-03-12
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Updated
2021-11-16
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