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Published May 1987 | Version Published
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A stripe-geometry InGaAsP/InP heterojunction bipolar transistor suitable for optical integration

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Abstract

A stripe-geometry InGaAsP/InP heterojunction bipolar transistor (HBT) was fabricated for the first time. High current gain (β > 500) and high collector current (I_c> 200 mA) were obtained in devices with an emitter-down configuration. The HBT was successfully integrated with a double-heterostructure (DH) laser, resulting in the first realization of laser operation in a vertical integration.

Additional Information

© 1987 IEEE. Manuscript received January 20, 1987. This work was supported by the Office of Naval Research, the National Science Foundation, and the Army Research Office.

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Identifiers

Eprint ID
79170
Resolver ID
CaltechAUTHORS:20170718-165038642

Funding

Office of Naval Research (ONR)
NSF
Army Research Office (ARO)

Dates

Created
2017-07-19
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Updated
2021-11-15
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