Welcome to the new version of CaltechAUTHORS. Login is currently restricted to library staff. If you notice any issues, please email coda@library.caltech.edu
Published November 15, 2004 | Published
Journal Article Open

Fabrication of conducting Si nanowire arrays


The recent development of the superlattice nanowire pattern transfer technique allows for the fabrication of arrays of nanowires at a diameter, pitch, aspect ratio, and regularity beyond competing approaches. Here, we report the fabrication of conducting Si nanowire arrays with wire widths and pitches of 10–20 and 40–50 nm, respectively, and resistivity values comparable to the bulk through the selection of appropriate silicon-on-insulator substrates, careful reactive-ion etching, and spin-on glass doping. These results promise the realization of interesting nanoelectronic circuits and devices, including chemical and biological sensors, nanoscale mosaics for electronics, and ultradense field-effect transistor arrays.

Additional Information

© 2004 American Institute of Physics (Received 11 March 2004; accepted 2 August 2004) This work was supported by the DARPA, the MARCO Materials Structures and Devices Focus Center. The authors would also like to acknowledge Dr. Kris Beverly and Akram Boukai for fabrication assistance.

Attached Files

Published - BECjap04.pdf


Files (312.8 kB)
Name Size Download all
312.8 kB Preview Download

Additional details

August 22, 2023
October 13, 2023