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Published April 15, 1972 | public
Journal Article Open

Solid-Phase Growth of Ge from Evaporated Al Layer


Solid Al was used as a medium from which to grow Ge onto a substrate of crystalline Ge. Evidence for growth was obtained from MeV He+ backscattering, which showed both Ge dissolution and growth can occur at the Ge/Al interface. Backscattering experiments also indicated transport from evaporated Ge through the Al medium to a crystalline Ge substrate. Diodes formed by temperature cycling a structure of n-type Ge/Al showed hole injection into the substrate during reverse-recovery-time measurements, confirming the expectation that Ge growth is present and is heavily p type from incorporation of the Al solvent during growth.

Additional Information

©1972 The American Institute of Physics (Received 27 December 1971) Supported in part by Advanced Research Projects Agency. The authors wish to thank J. W. Mayer for valuable discussions during the course of this work. One of us (G.O.) thanks Professor A. Albergigi Quaranta for his support.


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