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Published January 12, 2009 | Published
Journal Article Open

Wafer-bonded single-crystal silicon slot waveguides and ring resonators


We fabricated horizontal Si slot waveguides with a 25 nm SiO2 slot layer by bonding thin Si-on-insulator wafers. After removing the Si substrate and buried oxide from one side of the bonded structure, grating-coupled waveguides and ring resonators were partially etched into the Si/SiO2/Si device layers. The gratings exhibit efficiencies of up to 23% at 1550 nm and the ring resonators were measured to have loaded quality factors near 42 000 for the lowest-order transverse-electric mode, corresponding to a propagation loss of 15 dB/cm. The leaky lowest-order transverse-magnetic mode was also observed with a propagation loss of 44 dB/cm.

Additional Information

© 2009 American Institute of Physics. Received 9 October 2008; accepted 21 December 2008; published 13 January 2009. The authors gratefully acknowledge H.J. Lezec and M.J. Archer for TEM assistance. R.M.B. also acknowledges the support of the NDSEG Fellowship and M.S. thanks the NSF for his Graduate Research Fellowship. This project was funded by the AFOSR under MURI Award No. FA9550-06-1-0470 as well as by the Kavli Nanoscience Institute and DARPA under EPIC Program No. HR0011-04-10054, and it made use of the facilities of the Center for Science and Engineering of Materials, an NSF MRSEC.

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