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Published July 2011 | public
Journal Article

Controlled Heterogeneous Nucleation and Growth of Germanium Quantum Dots on Nanopatterned Silicon Dioxide and Silicon Nitride Substrates


Controlled heterogeneous nucleation and growth of Ge quantum dots (QDs) are demonstrated on SiO_2/Si_3N_4 substrates by means of a novel fabrication process of thermally oxidizing nanopatterned SiGe layers. The otherwise random self-assembly process for QDs is shown to be strongly influenced by the nanopatterning in determining both the location and size of the QDs. Ostwald ripening processes are observed under further annealing at the oxidation temperature. Both nanopattern oxidation and Ostwald ripening offer additional mechanisms for lithography for controlling the size and placement of the QDs.

Additional Information

© 2011 American Chemical Society. Received: April 14, 2011 Revised: May 13, 2011. Publication Date (Web): May 31, 2011. This work was supported by the National Science Council of the Republic of China (NSC 99-2120-M-008-004 and NSC-99-2221-E-008-095-MY3).

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