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Published May 1, 1985 | public
Journal Article Open

The effect of spatially dependent temperature and carrier fluctuations on noise in semiconductor lasers


The spatially dependent equations of motion for a single-mode semiconductor laser including Langevin source terms are derived and solved. The relative intensity, frequency, and field fluctuation spectra are derived and calculated. The results include low-frequency excess noise, frequency noise enhancement due to two forms of amplitude-phase coupling, and power-independent contributions to the linewidth.

Additional Information

© Copyright 1985 IEEE. Reprinted with permission. Manuscript received October 8, 1984; revised January 23, 1985. This work was supported in part by the Office of Naval Research, by the ITT Corporation, and by Rockwell International. R.J. Lang was supported in part by a fellowship from the National Science Foundation. K.J. Vahala was supported in part by a fellowship from IBM.


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