of 7
1
Supporting Information for
On the Self-Assembly of Brush Block Copolymers
in Thin Films
Sung Woo Hong,
1†€
Weiyin Gu,
1€
June Huh,
2††
Benjamin R. Sveinbjornsson,
3
Gajin Jeong,
1
Robert H. Grubbs,
3*
and Thomas P. Russell
1**
1
Department of Polymer Science and Engineering, 120
Governors Drive, University of
Massachusetts Amherst, Amherst, MA 01003 USA,
2
Department of Material Science and
Engineering, 134 Shinchon-dong, Seodaemun-gu, Yonse
i University, Seoul 120-749 Korea,
3
Division of Chemistry and Chemical Engineering, Cal
ifornia Institute of Technology, Pasadena,
CA 91125 USA.
[
] Present Address: Samsung Advanced Institute of Te
chnology (SAIT), Mt. 14-1, Nongseo-
dong, Giheung-gu, Yongin-si, Gyeonggi-do 446-712, R
epublic of Korea.
[
] These authors contributed equally to this work.
2
Figure S1.
SFM height (A1-F1) and phase (A2-F2) images of so
lvent annealed thin films of [
g
-
S
2.4
]
19
-
b
-[
g
-LA
2.4
]
25
, [
g
-S
2.4
]
35
-
b
-[
g
-LA
2.4
]
43
, [
g
-S
2.4
]
51
-
b
-[
g
-LA
2.4
]
67
, [
g
-S
2.4
]
98
-
b
-[
g
-LA
2.4
]
124
, [
g
-
S
2.4
]
189
-
b
-[
g
-LA
2.4
]
233
, and [
g
-S
2.4
]
259
-
b
-[
g
-LA
2.4
]
381
, respectively. Scale bars: 500 nm.
3
Figure S2.
SFM height (A1-F1) and phase (A2-F2) images of s
olvent annealed thin films of [
g
-
S
4.3
]
11
-
b
-[
g
-LA
4.5
]
14
, [
g
-S
4.3
]
19
-
b
-[
g
-LA
4.5
]
2
, [
g
-S
4.3
]
32
-
b
-[
g
-LA
4.5
]
42
, [
g
-S
4.3
]
42
-
b
-[
g
-LA
4.5
]
58
, [
g
-
S
4.3
]
93
-
b
-[
g
-LA
4.5
]
128
and [
g
-S
4.3
]
206
-
b
-[
g
-LA
4.5
]
278
, respectively. Scale bars: 500 nm.
4
(A)
(B)
(C)
Figure S3
. Survey spectra of XPS spectroscopy of (A) [
g
-S
2.4
]
189
-
b
-[
g
-LA
2.4
]
233
, (B) [
g
-S
2.4
]
259
-
b
-[
g
-LA
2.4
]
381,
and (C) [
g
-S
4.3
]
93
-
b-
[
g
-LA
4.5
]
128
on Si substrates.
5
Table 1S
: Carbon:Oxygene Atomic Concentration (According to
C 1s and O 1s Peaks in XPS
Spectroscopy)
15
o
75
o
[
g
-S
2.4
]
189
-
b
-[
g
-LA
2.4
]
233
80.2:11.5
89.5:7.2
[
g
-S
2.4
]
259
-
b
-[
g
-LA
2.4
]
381
70.2:24.9
73.9:25
[
g
-S
4.3
]
93
-
b-
[
g
-LA
4.5
]
128
79.2:20.8
78.8:21.2
Figure S4.
Cross sectional line scan of thin films of [
g
-S
5.1
]
54
-
b
-[
g
-LA
4.4
]
51
.
6
Figure S5.
GI-SAXS patterns of thin films of (A) [
g
-S
2.4
]
19
-
b
-[
g
-LA
2.4
]
25
(B) [
g
-S
2.4
]
35
-
b
-[
g
-
LA
2.4
]
43
, (C) [
g
-S
2.4
]
51
-
b
-[
g
-LA
2.4
]
67
, and (D) [
g
-S
2.4
]
98
-
b
-[
g
-LA
2.4
]
124
on Si substrates.
q
y
is the
in-plane scattering vector and
q
z
is the out-of-plane scattering vector.
Film thickness of samples in Figure 3 (measured by
ellipsometry):
Bottom to Top
Figure 3A 38 nm
42 nm
42 nm
56 nm
60 nm
63 nm
Figure 3B 47 nm
50 nm
53 nm
54 nm
58 nm
58 nm
7
Scheme S1.
Solvent annealing process