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Published October 14, 2013 | Supplemental Material
Journal Article Open

Photoelectrochemical Behavior of n‑Type Si(111) Electrodes Coated With a Single Layer of Graphene


The behavior of graphene-coated n-type Si(111) photoanodes was compared to the behavior of H-terminated n-type Si(111) photoanodes in contact with aqueous K_3[Fe(CN)_6]/K_4[Fe(CN)_6] as well as in contact with a series of outer-sphere, one-electron redox couples in nonaqueous electrolytes. The n-Si/Graphene electrodes exhibited stable short-circuit photocurrent densities of over 10 mA cm^(–2) for >1000 s of continuous operation in aqueous electrolytes, whereas n-Si–H electrodes yielded a nearly complete decay of the current density within 100 s. The values of the open-circuit photovoltages and the flat-band potentials of the Si were a function of both the Fermi level of the graphene and the electrochemical potential of the electrolyte solution, indicating that the n-Si/Graphene did not form a buried junction with respect to the solution contact.

Additional Information

© 2013 American Chemical Society. Received: July 20, 2013. Just Accepted Manuscript October 14, 2013. N.S.L. and A.C.N. acknowledge the NSF, Grant CHE-1214152, for support and the Beckman Institute Molecular Materials Resource Center for facilities. A.C.N. acknowledges support from the Dept. of Defense through the National Defense Science & Engineering Graduate Fellowship Program. S.A. acknowledges support from a U.S. Dept. of Energy, Office of Energy Efficiency and Renewable Energy (EERE) Postdoctoral Research Award under EERE Fuel Cell Technologies Program. N.P. and J.H. acknowledge the Center for Re-Defining Photovoltaic Efficiency Through Molecular-Scale Control, an Energy Frontier Research Center funded by the U.S. Dept. of Energy, Office of Science, Office of Basic Energy Sciences under Award DE-SC0001085.

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