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Published March 1992 | Published
Journal Article Open

Quantitative analysis of semiconductor alloy composition during growth by reflection-electron energy loss spectroscopy


Determination of alloy composition during epitaxial growth of GexSi1–x alloys has been demonstrated using reflection-electron energy loss spectroscopy (REELS) at reflection high-energy electron diffraction (RHEED) energies. Measurements of inelastic scattering intensities from Si K (1840 eV) and Ge L2,3 (1217 eV) core losses were performed using a conventional RHEED gun together with an electron energy loss spectrometer in a molecular beam epitaxy system. Comparison of ex situ composition measurements by Rutherford backscattering and energy dispersive x-ray spectroscopy in a transmission electron microscope indicate excellent agreement with composition determination by REELS, demonstrating the capability of REELS as a quantitative in situ analysis technique. Application of REELS to other semiconductors is discussed and initial results for III–V and II–VI semiconductor alloys (GaAs, CdTe, and ZnTe) are also presented.

Additional Information

© 1992 American Vacuum Society. (Received 16 September 1991; accepted 29 October 1991) This work was supported by the National Science Foundation P.Y.I.A. program (DMR-8958070) and the Materials Research Group program (DMR-8811795), as well as the Caltech Consortium in Chemistry and Chemical Engineering. We thank Dr. Jack Dinan for providing the II-VI smaple, and Bart Stevens for the help with the RBS measurements. Philips Electronics Instruments is acknowledged for the loan of the spectrometer.

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