Published May 10, 1993 | public
Journal Article Open
Direct determination of the ambipolar diffusion length in strained InxGa1−xAs/InP quantum wells by cathodoluminescence
The ambipolar diffusion length is measured in strained InxGa1−xAs/InP quantum wells for several mole fractions in the interval 0.3
Additional Information© 1993 American Institute of Physics. Received 21 December 1992; accepted 15 March 1993. The authors would like to acknowledge the support of the National Science Foundation. One of us (R.B.L.) would like to acknowledge the support of a National Defense Science and Engineering Graduate Fellowship.