Published May 10, 1993
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Journal Article
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Direct determination of the ambipolar diffusion length in strained InxGa1−xAs/InP quantum wells by cathodoluminescence
Abstract
The ambipolar diffusion length is measured in strained InxGa1−xAs/InP quantum wells for several mole fractions in the interval 0.3
Additional Information
© 1993 American Institute of Physics. Received 21 December 1992; accepted 15 March 1993. The authors would like to acknowledge the support of the National Science Foundation. One of us (R.B.L.) would like to acknowledge the support of a National Defense Science and Engineering Graduate Fellowship.Files
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2008-04-03Created from EPrint's datestamp field
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