A 24-GHz, +14.5-dBm fully integrated power amplifier in 0.18-μm CMOS
A 24-GHz +14.5-dBm fully integrated power amplifier with on-chip 50-[ohm] input and output matching is demonstrated in 0.18-μm CMOS. The use of substrate-shielded coplanar waveguide structures for matching networks results in low passive loss and small die size. Simple circuit techniques based on stability criteria derived result in an unconditionally stable amplifier. The power amplifier achieves a power gain of 7 dB and a maximum single-ended output power of +14.5-dBm with a 3-dB bandwidth of 3.1 GHz, while drawing 100 mA from a 2.8-V supply. The chip area is 1.26 mm^2.
"© 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE." Manuscript received December 8, 2004; revised February 25, 2005. The authors would like to thank IBM for chip fabrication, as well as A. Babakhani, H. Hashemi, M. Morgan, E. Afshari, B. Analui, and N. Wadefalk of Caltech, A. Mirzaei of UCLA, and the anonymous reviewers for their assistance and feedback. The technical support for CAD tools from Agilent Technologies, Ansoft Corp., and Zeland Software, Inc., is also appreciated.