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Published July 1990 | public
Journal Article Open

Measurement of the valence band offset in novel heterojunction systems: Si/Ge (100) and AlSb/ZnTe (100)


We have used x-ray photoelectron spectroscopy to measure the valence band offset in situ for strained Si/Ge (100) heterojunctions and for AlSb/ZnTe (100) heterojunctions grown by molecular-beam epitaxy. For the Si/Ge system, Si 2p and Ge 3d core level to valence band edge binding energies and Si 2p to Ge 3d core level energy separations were measured as functions of strain, and strain configurations in all samples were determined using x-ray diffraction. Our measurements yield valence band offset values of 0.83±0.11 eV and 0.22±0.13 eV for Ge on Si (100) and Si on Ge (100), respectively. If we assume that the offset between the weighted averages of the light-hole, heavy-hole, and spin-orbit valence bands in Si and Ge is independent of strain, we obtain a discontinuity in the average valence band edge of 0.49±0.13 eV. For the AlSb/ZnTe (100) heterojunction system, we obtain a value of –0.42±0.07 eV for the valence band offset. Our data also suggest that an intermediate compound, containing Al and Te, is formed at the AlSb/ZnTe (100) interface.

Additional Information

© 1990 American Vacuum Society. (Received 30 January 1990; accepted 14 March 1990) We would like to acknowledge useful discussions with R.J. Hauenstein and Y. Rajakarunanayake. One of us (E.T.Y.) is grateful for financial support from the National Science Foundation and the AT&T Foundation. Part of this work was supported by DARPA (monitored by ONR) under Grant No. N00014-86-K-0841 and by ONR under Grant No. N00014-89-J-1141.


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