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Published June 2010 | public
Journal Article

Unity-Order Index Change in Transparent Conducting Oxides at Visible Frequencies


We report a method for obtaining unity-order refractive index changes in the accumulation layer of a metal-oxide-semiconductor heterostructure with conducting oxide as the active material. Under applied field, carrier concentrations at the dielectric/conducting oxide interface increase from 1 × 10^(21)/cm^3 to 2.8 × 10^(22)/cm^3, resulting in a local refractive index change of 1.39 at 800 nm. When this structure is modeled as a plasmonic waveguide, the change corresponds to a modal index change of 0.08 for the plasmonic mode.

Additional Information

© 2010 American Chemical Society. Received for review: 02/22/2010. Published on Web: 05/18/2010. We thank S. Burgos, A. Leenheer, D. O'Carroll, G. Kimball, and G. Miller for engaging discussions and technical assistance. We acknowledge support by the Office of Basic Energy Sciences under Contract Number DOE DE-FG02-07ER46405 and under the Air Force Office of Scientific Research under Grant FA9550- 09-1-0673. E.F. acknowledges fellowship support from the Rothschild Foundation.

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