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Published October 15, 1982 | Published
Journal Article Open

Orientation selection by zone-melting silicon films through planar constrictions


Recrystallization of encapsulated Si films on SiO2 by zone-melting produces films composed of several grains approximately 1 mm wide and extending the length of the scan. Within grains there are sub-boundaries. We report a technique for producing recrystallized Si films of a single orientation. The technique consists of patterning polysilicon with a narrow, planar constriction and passing a molten zone through it so that only one orientation propagates beyond the constriction. We also show that sub-boundaries can be eliminated in the constriction.

Additional Information

© 1982 American Institute of Physics. Received 16 July 1982; accepted for publication 6 August 1982. This work was sponsored by the Department of Energy and the Defense Advanced Research Projects Agency. The authors are grateful to R. W. Mountain who provided the substrates, and to J. M. Carter, C. L. Doherty, and J. L. Vigilante, and S. Gatley for technical assistance.

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