Low threshold, room temperature pulsed operation of 1.5 μm vertical-cavity surface-emitting lasers with an optimized multi-quantum well active layer

Abstract

Room temperature, pulsed operation of 1.5 μm vertical-cavity surface-emitting laser is demonstrated by the optimization of an InGaAs/InGaAsP multi-quantum well active layer, especially the number of quantum wells and the barrier thickness considering matched gain effect. Low threshold currents of 17 mA in 5×7 μm^2-devices and 25 mA in 7×10 μm^2-devices were achieved.

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© 1994 IEEE. Reprinted with permission. Manuscript received September 9, 1993.

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Published - UOMieeeptl94.pdf

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