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Nakayama, Keisuke and Tanabe, Katsuaki and Atwater, Harry A. (2008) Improved electrical properties of wafer-bonded p-GaAs/n-InP interfaces with sulfide passivation. Journal of Applied Physics, 103 (9). Art. No. 094503. ISSN 0021-8979. http://resolver.caltech.edu/CaltechAUTHORS:NAKjap08

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