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Nieh, C. W. and Lin, T. L. (1989) In situ transmission electron microscopy study on the epitaxial growth of CoSi2 on Si(111) at temperatures below 150 °C. Journal of Applied Physics, 66 (7). pp. 3402-3404. ISSN 0021-8979. doi:10.1063/1.344090. https://resolver.caltech.edu/CaltechAUTHORS:NIEjap89

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