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Hwu, R. J. and Sadwick, P. and Luhmann, Jr., N. C. et al. (1988) DC and millimeter-wave performance of watt-level barrier-intrinsic-n+ diode-grid frequency multiplier fabricated on III-V compound semiconductors. In: International Electron Devices Meeting (IEDM '88), Technical Digest, San Francisco, CA, 11-14 December 1988. IEEE , Piscataway, NJ, pp. 191-194. http://resolver.caltech.edu/CaltechAUTHORS:HWUiedm88

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