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Bai, G. and Nicolet, M.-A. (1991) Defect production in Si(100) by 19F, 28Si, 40Ar, and 131Xe implantation at room temperature. Journal of Applied Physics, 70 (7). pp. 3551-3555. ISSN 0021-8979. doi:10.1063/1.349251. https://resolver.caltech.edu/CaltechAUTHORS:BAIjap91c

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