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Tsai, C. J. and Atwater, H. A. and Vreeland, T. (1990) Strain modification in coherent Ge and SixGe1–x epitaxial films by ion-assisted molecular beam epitaxy. Applied Physics Letters, 57 (22). pp. 2305-2307. ISSN 0003-6951. doi:10.1063/1.103877. https://resolver.caltech.edu/CaltechAUTHORS:TSAapl90

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