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Mii, Y. J. and Lin, T. J. and Kao, Y. C. et al. (1988) Studies of molecular-beam epitaxy growth of GaAs on porous Si substrates. Journal of Vacuum Science and Technology B, 6 (2). pp. 696-701. ISSN 1071-1023. doi:10.1116/1.584395. https://resolver.caltech.edu/CaltechAUTHORS:MIIjvstb88

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