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Items where Person is "Bridger-P-M"

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Jump to: 1999 | 1998
Number of items: 9.

1999

Hill, C. J. and Bridger, P. M. and Picus, G. S. et al. (1999) Scanning apertureless microscopy below the diffraction limit: Comparisons between theory and experiment. Applied Physics Letters, 75 (25). pp. 4022-4024. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:HILapl99

Jones, J. T. and Bridger, P. M. and Marsh, O. J. et al. (1999) Charge storage in CeO2/Si/CeO2/Si(111) structures by electrostatic force microscopy. Applied Physics Letters, 75 (9). pp. 1326-1328. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:JONapl99

Bridger, P. M. and Bandić, Z. Z. and Piquette, E. C. et al. (1999) Electric force microscopy of induced charges and surface potentials in GaN modified by light and strain. Journal of Vacuum Science and Technology B, 17 (4). pp. 1750-1752. ISSN 1071-1023. https://resolver.caltech.edu/CaltechAUTHORS:BRIjvstb99

Bridger, P. M. and Bandić, Z. Z. and Piquette, E. C. et al. (1999) Measurement of induced surface charges, contact potentials, and surface states in GaN by electric force microscopy. Applied Physics Letters, 74 (23). pp. 3522-3524. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:BRIapl99

Piquette, E. C. and Bridger, P. M. and Bandić, Z. Z. et al. (1999) Morphology, polarity, and lateral molecular beam epitaxy growth of GaN on sapphire. Journal of Vacuum Science and Technology B, 17 (3). pp. 1241-1245. ISSN 1071-1023. https://resolver.caltech.edu/CaltechAUTHORS:20120110-101005142

Bandić, Z. Z. and Bridger, P. M. and Piquette, E. C. et al. (1999) High voltage (450 V) GaN Schottky rectifiers. Applied Physics Letters, 74 (9). pp. 1266-1268. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:BANapl99

Piquette, E. C. and Bridger, P. M. and Beach, R. A. et al. (1999) Effect of Buffer Layer and III/V Ratio on the Surface Morphology of GaN Grown by MBE. MRS Internet Journal of Nitride Semiconductor Research, 4S1 . Art. No. G3.77. ISSN 1092-5783. https://resolver.caltech.edu/CaltechAUTHORS:PIQmrsijsnr99

1998

Bridger, P. M. and Bandić, Z. Z. and Piquette, E. C. et al. (1998) Correlation between the surface defect distribution and minority carrier transport properties in GaN. Applied Physics Letters, 73 (23). pp. 3438-3440. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:BRIapl98

Bandić, Z. Z. and Bridger, P. M. and Piquette, E. C. et al. (1998) Electron diffusion length and lifetime in p-type GaN. Applied Physics Letters, 73 (22). pp. 3276-3278. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:BANapl98b

This list was generated on Tue Oct 15 18:24:50 2019 PDT.