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Items where Person is "Eng-L"

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Jump to: 1995 | 1993 | 1990 | 1989
Number of items: 9.

1995

Chen, T. R. and Zhao, B. and Eng, L. et al. (1995) Parametric study of cavity length and mirror reflectivity in ultralow threshold quantum well InGaAs/AlGaAs lasers. Electronics Letters, 31 (4). pp. 285-287. ISSN 0013-5194. https://resolver.caltech.edu/CaltechAUTHORS:CHEel95

1993

Chen, T. R. and Zhao, B. and Eng, L. et al. (1993) Very High Modulation Efficiency of Ultralow Threshold Current Single Quantum Well InGaAs Lasers. Electronics Letters, 29 (17). pp. 1525-1526. ISSN 0013-5194. https://resolver.caltech.edu/CaltechAUTHORS:CHEel93

1990

Eng, L. E. and Mehuys, D. G. and Mittelstein, M. et al. (1990) Broadband Tuning (170nm) of InGaAs Quantum Well Lasers. Electronics Letters, 26 (20). pp. 1675-1677. ISSN 0013-5194. https://resolver.caltech.edu/CaltechAUTHORS:ENGel90

Sanders, S. and Eng, L. and Yariv, A. (1990) Passive Mode-Locking of Monolithic InGaAs/AlGaAs Double Quantum Well Lasers at 42GHz Repetition Rate. Electronics Letters, 26 (14). pp. 1087-1089. ISSN 0013-5194. https://resolver.caltech.edu/CaltechAUTHORS:SANel90

Chen, T. R. and Eng, L. and Zhao, B. et al. (1990) Submilliamp threshold InGaAs-GaAs strained layer quantum-well laser. IEEE Journal of Quantum Electronics, 26 (7). pp. 1183-1190. ISSN 0018-9197. https://resolver.caltech.edu/CaltechAUTHORS:CHEieeejqe90

Mehuys, D. and Eng, L. and Mittelstein, M. et al. (1990) Ultrabroadband tunable external-cavity quantum well lasers. In: Laser Diode Technology and Applications II. Proceedings of SPIE. No.1219. Society of Photo-Optical Instrumentation Engineers (SPIE) , Bellingham, WA, pp. 358-365. ISBN 0819402605. https://resolver.caltech.edu/CaltechAUTHORS:20161021-134720448

1989

Zarem, H. A. and Lebens, J. A. and Nordstrom, K. B. et al. (1989) Effect of Al mole fraction on carrier diffusion lengths and lifetimes in AlxGa1−xAs. Applied Physics Letters, 55 (25). pp. 2622-2624. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:ZARapl89b

Zarem, H. A. and Sercel, P. C. and Lebens, J. A. et al. (1989) Direct determination of the ambipolar diffusion length in GaAs/AlGaAs heterostructures by cathodoluminescence. Applied Physics Letters, 55 (16). pp. 1647-1649. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:ZARapl89a

Eng, L. E. and Chen, T. R. and Sanders, S. et al. (1989) Submilliampere threshold current pseudomorphic InGaAs/AlGaAs buried-heterostructure quantum well lasers grown by molecular beam epitaxy. Applied Physics Letters, 55 (14). pp. 1378-1379. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:ENGapl89

This list was generated on Mon Aug 10 02:14:34 2020 PDT.