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Items where Person is "Lau-S-S"

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Jump to: 1983 | 1982 | 1981 | 1979 | 1978 | 1977 | 1976 | 1975 | 1974 | 1973
Number of items: 20.

1983

Hung, L. S. and Gyulai, J. and Mayer, J. W. et al. (1983) Kinetics of TiSi2 formation by thin Ti films on Si. Journal of Applied Physics, 54 (9). pp. 5076-5080. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:HUNjap83

Liu, Bai-Xin and Johnson, W. L. and Nicolet, M-A. et al. (1983) Structural difference rule for amorphous alloy formation by ion mixing. Applied Physics Letters, 42 (1). pp. 45-47. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:LIUapl83a

1982

Suni, I. and Göltz, G. and Grimaldi, M. G. et al. (1982) Compensating impurity effect on epitaxial regrowth rate of amorphized Si. Applied Physics Letters, 40 (3). pp. 269-271. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:SUNapl82

Mäenpää, M. and Kuech, T. F. and Nicolet, M-A. et al. (1982) The heteroepitaxy of Ge on Si: A comparison of chemical vapor and vacuum deposited layers. Journal of Applied Physics, 53 (2). pp. 1076-1083. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:MAEjap82

1981

Tsaur, B. Y. and Lau, S. S. and Mayer, J. W. et al. (1981) Sequence of phase formation in planar metal-Si reaction couples. Applied Physics Letters, 38 (11). pp. 922-924. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:TSAapl81

Grimaldi, M. G. and Mäenpää, M. and Paine, B. M. et al. (1981) Epitaxial growth of amorphous Ge films deposited on single-crystal Ge. Journal of Applied Physics, 52 (3). pp. 1351-1355. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:GRIjap81

1979

Lau, S. S. and von Allmen, M. and Golecki, I. et al. (1979) Solar furnace annealing of amorphous Si layers. Applied Physics Letters, 35 (4). pp. 327-329. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:LAUapl79

1978

Lau, S. S. (1978) Regrowth of amorphous films. Journal of Vacuum Science and Technology, 15 (5). pp. 1656-1661. ISSN 0022-5355. https://resolver.caltech.edu/CaltechAUTHORS:20120801-141731004

Lau, S. S. and Tseng, W. F. and Nicolet, M-A. et al. (1978) Heteroepitaxy of deposited amorphous layer by pulsed electron-beam irradiation. Applied Physics Letters, 33 (3). pp. 235-237. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:LAUapl78b

Lau, S. S. and Tseng, W. F. and Nicolet, M-A. et al. (1978) Epitaxial growth of deposited amorphous layer by laser annealing. Applied Physics Letters, 33 (2). pp. 130-131. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:LAUapl78a

1977

Pretorius, R. and Liau, Z. L. and Lau, S. S. et al. (1977) Growth mechanism for solid-phase epitaxy of Si in the Si <100>/Pd2Si/Si(amorphous) system studied by a radioactive tracer technique. Journal of Applied Physics, 48 (7). pp. 2886-2890. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:PREjap77

Pretorius, R. and Ramiller, C. L. and Lau, S. S. et al. (1977) Radioactive silicon as a marker in thin-film silicide formation. Applied Physics Letters, 30 (10). pp. 501-503. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:PREapl77

Lau, S. S. and Liau, Z. L. and Nicolet, M-A. et al. (1977) Heterostructure by solid‐phase epitaxy in the Si〈111〉/Pd/Si (amorphous) system. Journal of Applied Physics, 48 (3). pp. 917-919. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:20120808-085747179

1976

Pretorius, R. and Liau, Z. L. and Lau, S. S. et al. (1976) Dissociation mechanism for solid-phase epitaxy of silicon in the Si <100>/Pd2Si/Si (amorphous) system. Applied Physics Letters, 29 (9). pp. 598-600. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:PREapl76

Nakamura, K. and Olowolafe, J. O. and Lau, S. S. et al. (1976) Interaction of metal layers with polycrystalline Si. Journal of Applied Physics, 47 (4). pp. 1278-1283. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:NAKjap76

Nakamura, K. and Lau, S. S. and Nicolet, M-A. et al. (1976) Ti and V layers retard interaction between Al films and polycrystalline Si. Applied Physics Letters, 28 (5). pp. 277-280. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:NAKapl76

Lau, S. S. and Canali, C. and Liau, Z. L. et al. (1976) Antimony doping of Si layers grown by solid-phase epitaxy. Applied Physics Letters, 28 (3). pp. 148-150. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:LAUapl76

1975

Vreeland, T., Jr. and Lau, S. S. (1975) A simple image intensifying system for Berg-Barrett topography. Review of Scientific Instruments, 46 (1). pp. 41-43. ISSN 0034-6748. https://resolver.caltech.edu/CaltechAUTHORS:20120814-154233864

1974

Vreeland, Thad, Jr. and Lau, Silvanus S. (1974) A study of dislocation mobility and density in metallic crystals. . (Unpublished) https://resolver.caltech.edu/CaltechAUTHORS:20150127-092740738

1973

Lau, S. S. and Vreeland, T., Jr. (1973) The introduction of dislocations and slip bands in molybdenum single crystals. Physica Status Solidi A, 20 (1). pp. 337-342. ISSN 1862-6300. https://resolver.caltech.edu/CaltechAUTHORS:20150211-115716594

This list was generated on Mon Aug 3 23:04:02 2020 PDT.