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Items where Person is "McCaldin-J-O"

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Number of items: 46.

1998

Bandić, Z. Z. and Piquette, E. C. and McCaldin, J. O. et al. (1998) Solid phase recrystallization of ZnS thin films on sapphire. Applied Physics Letters, 72 (22). pp. 2862-2864. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:BANapl98

1997

Piquette, E. C. and Bandić, Z. Z. and McCaldin, J. O. et al. (1997) Growth and characterization of light emitting ZnS/GaN heterostructures. Journal of Vacuum Science and Technology B, 15 (4). pp. 1148-1152. ISSN 1071-1023. https://resolver.caltech.edu/CaltechAUTHORS:20120130-111304712

1995

Wang, M. W. and McCaldin, J. O. and Swenberg, J. F. et al. (1995) Schottky-based band lineups for refractory semiconductors. Applied Physics Letters, 66 (15). pp. 1974-1976. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:WANapl95

1994

Wang, M. W. and Swenberg, J. F. and Phillips, M. C. et al. (1994) X-ray photoelectron spectroscopy measurement of valence-band offsets for Mg-based semiconductor compounds. Applied Physics Letters, 64 (25). pp. 3455-3457. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:WANapl94

1993

Wang, M. W. and Phillips, M. C. and Swenberg, J. F. et al. (1993) n-CdSe/p-ZnTe based wide band-gap light emitters: Numerical simulation and design. Journal of Applied Physics, 73 (9). pp. 4660-4668. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:20120307-105358808

1992

Yu, E. T. and Phillips, M. C. and Chow, D. H. et al. (1992) Interfacial reactions and band offsets in the AlSb/GaSb/ZnTe material system. Physical Review B, 46 (20). pp. 13379-13388. ISSN 0163-1829. https://resolver.caltech.edu/CaltechAUTHORS:YUEprb92

McCaldin, J. O. and McGill, T. C. (1992) Comment on "Empirical fit to band discontinuities and barrier heights in III-V alloy systems". Applied Physics Letters, 61 (18). p. 2243. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:MCCapl92

Phillips, M. C. and Wang, M. W. and Swenberg, J. F. et al. (1992) Proposal and verification of a new visible light emitter based on wide band gap II-VI semiconductors. Applied Physics Letters, 61 (16). pp. 1962-1964. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:PHIapl92

Liu, Y. X. and Wang, M. W. and McCaldin, J. O. et al. (1992) Schottky barrier induced injecting contact on wide band gap semiconductors. Journal of Vacuum Science and Technology B, 10 (4). pp. 2072-2076. ISSN 1071-1023. https://resolver.caltech.edu/CaltechAUTHORS:LIUjvstb92

1991

Yu, E. T. and Phillips, M. C. and McCaldin, J. O. et al. (1991) Measurement of the CdSe/ZnTe valence band offset by x-ray photoelectron spectroscopy. Journal of Vacuum Science and Technology B, 9 (4). pp. 2233-2237. ISSN 1071-1023. https://resolver.caltech.edu/CaltechAUTHORS:YUEjvstb91

1990

Yu, E. T. and Croke, E. T. and Chow, D. H. et al. (1990) Measurement of the valence band offset in novel heterojunction systems: Si/Ge (100) and AlSb/ZnTe (100). Journal of Vacuum Science and Technology B, 8 (4). pp. 908-915. ISSN 1071-1023. https://resolver.caltech.edu/CaltechAUTHORS:YUEjvstb90

McCaldin, J. O. (1990) Current approaches to pn junctions in wider band gap II–VI semiconductors. Journal of Vacuum Science and Technology A, 8 (2). pp. 1188-1193. ISSN 0734-2101. https://resolver.caltech.edu/CaltechAUTHORS:MCCjvsta90

1989

Rajakarunanayake, Y. and Cole, B. H. and McCaldin, J. O. et al. (1989) Growth and characterization of ZnTe films grown on GaAs, InAs, GaSb, and ZnTe. Applied Physics Letters, 55 (12). pp. 1217-1219. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:RAJapl89

1988

Chow, D. H. and McCaldin, J. O. and Bonnefoi, A. R. et al. (1988) Electrical determination of the valence-band discontinuity in HgTe-CdTe heterojunctions. Applied Physics Letters, 51 (26). pp. 2230-2232. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:CHOapl88

Chow, D. H. and McCaldin, J. O. and Bonnefoi, A. R. et al. (1988) Electrical studies of single-barrier Hg_(1-x)Cd_x Te heterostructures. Journal of Vacuum Science and Technology A, 6 (4). pp. 2614-2618. ISSN 0734-2101. https://resolver.caltech.edu/CaltechAUTHORS:20120601-092710911

McCaldin, J. O. and McGill, T. C. (1988) Proposal of a new visible light emitting structure: n-AlSb/p-ZnTe heterojunctions. Journal of Vacuum Science and Technology B, 6 (4). pp. 1360-1363. ISSN 1071-1023. https://resolver.caltech.edu/CaltechAUTHORS:MCCjvstb88

1985

Johnson, M. B. and Zur, A. and McCaldin, J. O. et al. (1985) Summary Abstract: Band offsets at HgTe CdTe interfaces. Journal of Vacuum Science and Technology B, 3 (4). p. 1260. ISSN 1071-1023. https://resolver.caltech.edu/CaltechAUTHORS:JOHjvstb85

1982

Kuech, T. F. and McCaldin, J. O. (1982) HgTe/CdTe heterojunctions: A lattice-matched Schottky barrier structure. Journal of Applied Physics, 53 (4). pp. 3121-3128. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:KUEjap82

1981

McCaldin, J. O. and Kuech, T. F. (1981) Stability and pinning points in substrate-confined liquids. Journal of Applied Physics, 52 (2). pp. 803-807. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:MCCjap81

1980

Kuech, T. F. and McGaldin, J. O. (1980) Compositional dependence of Schottky barrier heights for Au on chemically etched In_(x)Ga_(1-x)P surfaces. Journal of Vacuum Science and Technology, 17 (5). pp. 891-893. ISSN 0022-5355. https://resolver.caltech.edu/CaltechAUTHORS:20120718-141159392

McCaldin, J. O. and McGill­, T. C. (1980) The metal-semiconductor interface. Annual Review of Materials Science, 10 . pp. 65-83. ISSN 0084-6600. https://resolver.caltech.edu/CaltechAUTHORS:MCCarms80

Kuech, T. F. and McCaldin, J. O. (1980) Confining substrate for micron-thick liquid films. Applied Physics Letters, 37 (1). pp. 44-46. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:KUEapl80

1978

Scranton, R. A. and McCaldin, J. O. (1978) Dissolution of amorphous silicon into solid aluminum. Journal of Vacuum Science and Technology, 15 (4). pp. 1358-1361. ISSN 0022-5355. https://resolver.caltech.edu/CaltechAUTHORS:20120813-125643614

1977

Scranton, R. A. and Best, J. S. and McCaldin, J. O. (1977) Highly electronegative contacts to compound semiconductors. Journal of Vacuum Science and Technology, 14 (4). pp. 930-934. ISSN 0022-5355. https://resolver.caltech.edu/CaltechAUTHORS:20120809-111328673

1976

Best, J. S. and McCaldin, J. O. and McGill, T. C. et al. (1976) HgSe, a highly electronegative stable metallic contact for semiconductor devices. Applied Physics Letters, 29 (7). pp. 433-434. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:BESapl76

Scranton, R. A. and Mooney, J. B. and McCaldin, J. O. et al. (1976) Highly electronegative metallic contacts to semiconductors using polymeric sulfur nitride. Applied Physics Letters, 29 (1). pp. 47-48. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:20120808-132551604

Boatright, R. L. and McCaldin, J. O. (1976) Rapid growth of Si by solid‐phase epitaxy, including comparisons to conventional Si crystal growth. Journal of Vacuum Science and Technology, 13 (4). pp. 938-939. ISSN 0022-5355. https://resolver.caltech.edu/CaltechAUTHORS:20120725-094120934

McCaldin, J. O. and McGill, T. C. and Mead, C. A. (1976) Schottky barriers on compound semiconductors: The role of the anion. Journal of Vacuum Science and Technology, 13 (4). pp. 802-806. ISSN 0022-5355. https://resolver.caltech.edu/CaltechAUTHORS:MCCjvst76

Boatright, R. L. and McCaldin, J. O. (1976) Solid-state growth of Si to produce planar surfaces. Journal of Applied Physics, 47 (6). pp. 2260-2262. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:BOAjap76

McCaldin, J. O. and McGill, T. C. and Mead, C. A. (1976) Correlation for III-V and II-VI Semiconductors of the Au Schottky Barrier Energy with Anion Electronegativity. Physical Review Letters, 36 (1). pp. 56-58. ISSN 0031-9007. https://resolver.caltech.edu/CaltechAUTHORS:MCCprl76

1975

Best, John S. and McCaldin, J. O. (1975) Interfacial impurities and the reaction between Si and evaporated Al. Journal of Applied Physics, 46 (9). pp. 4071-4072. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:BESjap75

1974

McCaldin, J. O. (1974) Atom movements occurring at solid metal-semiconductor interfaces. Journal of Vacuum Science and Technology, 11 (6). pp. 990-995. ISSN 0022-5355. https://resolver.caltech.edu/CaltechAUTHORS:MCCjvst74

Ottaviani, G. and Sigurd, D. and Marrello, V. et al. (1974) Crystallization of Ge and Si in metal films. I. Journal of Applied Physics, 45 (4). pp. 1730-1739. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:OTTjap74

1973

Ottaviani, G. and Sigurd, D. and Marrello, V. et al. (1973) Crystal Growth of Silicon and Germanium in Metal Films. Science, 180 (4089). pp. 948-949. ISSN 0036-8075. https://resolver.caltech.edu/CaltechAUTHORS:20150812-150608307

Sankur, H. and McCaldin, J. O. and Devaney, John (1973) Solid-phase epitaxial growth of Si mesas from Al metallization. Applied Physics Letters, 22 (2). pp. 64-66. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:SANapl73

1972

Caywood, J. M. and Fern, A. M. and McCaldin, J. O. et al. (1972) Solid-Phase Growth of Ge from Evaporated Al Layer. Applied Physics Letters, 20 (8). pp. 326-327. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:CAYapl72

McCaldin, J. O. and Sankur, H. (1972) Precipitation of Si from the Al metallization of integrated circuits. Applied Physics Letters, 20 (4). pp. 171-172. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:MCCapl72

1971

McCaldin, J. O. and Sankur, H. (1971) Diffusivity and Solubility of Si in the Al Metallization of Integrated Circuits. Applied Physics Letters, 19 (12). pp. 524-527. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:MCCapl71

1970

McCaldin, J. O. and Mayer, J. W. (1970) Donor behavior in indium-alloyed silicon. Applied Physics Letters, 17 (9). pp. 365-366. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:MCCapl70

Fong, Francis K. and Fenn, John B., Jr. and McCaldin, J. O. (1970) Reactions in Crystalline Lattices: Chemistry of Lower Valence States of Lanthanides. Journal of Chemical Physics, 53 (4). pp. 1559-1565. ISSN 0021-9606. https://resolver.caltech.edu/CaltechAUTHORS:FONjcp70

1965

McCaldin, J. O. (1965) Solubility Interactions in Compensated, Heavily Doped Germanium. Journal of Applied Physics, 36 (1). pp. 211-213. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:MCCjap65

1964

McCaldin, J. O. and Widmer, A. E. (1964) Differing results obtained in the doping of semiconductors by energetic ions. Journal of Applied Physics, 35 (6). pp. 1985-1986. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:MCCjap64

1963

McCaldin, J. O. (1963) Solubility of Zinc in Gallium Arsenidem. Journal of Applied Physics, 34 (6). pp. 1748-1753. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:MCCjap63

1961

McCaldin, J. O. and Wittry, D. B. (1961) Germanium Saturated with Gallium Antimonide. Journal of Applied Physics, 32 (1). pp. 65-69. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:MCCjap61

1960

McCaldin, J. O. and Harada, Roy (1960) Influence of Arsenic Pressure on the Doping of Gallium Arsenide with Germanium. Journal of Applied Physics, 31 (11). pp. 2065-2066. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:20120920-094136745

McCaldin, J. O. (1960) Interaction between Arsenic and Aluminum in Germanium. Journal of Applied Physics, 31 (1). pp. 89-94. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:20120920-094154235

This list was generated on Tue Oct 15 18:04:00 2019 PDT.