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Number of items: 175.

2015

Nicolet, M. A. and Ryser, M. and Romano, V. (2015) Electrical resistivity change in amorphous Ta_42Si_13N_45 films by stress relaxation. Applied Physics A: Materials Science and Processing, 118 (3). pp. 1153-1160. ISSN 0947-8396. https://resolver.caltech.edu/CaltechAUTHORS:20150120-090507230

2011

Romano, V. and Meier, M. and Theodore, N. D. et al. (2011) Irradiation of amorphous Ta_(42)Si_(13)N_(45) film with a femtosecond laser pulse. Applied Physics A: Materials Science and Processing, 104 (1). pp. 357-364. ISSN 0947-8396. https://resolver.caltech.edu/CaltechAUTHORS:20110706-112823253

2003

Eisen, F. H. and Nicolet, M.-A. (2003) Preferred Position of the Detector for MeV Backscattering Spectrometry. In: Application of accelerators in research and industry. AIP Conference Proceedings. No.680. American Institute of Physics , Melville, NY, pp. 411-413. ISBN 0-7354-0149-7. https://resolver.caltech.edu/CaltechAUTHORS:20111011-081811288

2001

Nicolet, M.-A. and Giauque, P. H. (2001) Highly metastable amorphous or near-amorphous ternary films (mictamict alloys). Microelectronic Engineering, 55 (1-4). pp. 357-367. ISSN 0167-9317. https://resolver.caltech.edu/CaltechAUTHORS:20170822-160710299

2000

Nicolet, Marc-A. (2000) Reactively sputtered ternary films of the type TM–Si–N and their properties (TM=early transition metal). Vacuum, 59 (2-3). pp. 716-720. ISSN 0042-207X. https://resolver.caltech.edu/CaltechAUTHORS:20170816-155358775

1999

Gasser, S. M. and Kolawa, E. and Nicolet, M.-A. (1999) Thermal reaction of Pt film with 110 GaN epilayer. Journal of Vacuum Science and Technology A, 17 (5). pp. 2642-2646. ISSN 0734-2101. https://resolver.caltech.edu/CaltechAUTHORS:GASjvsta99

Gasser, S. M. and Ruiz, R. and Kolawa, E. et al. (1999) Instability of Amorphous Ru-Si-O Thin Films under Thermal Oxidation. Journal of the Electrochemical Society, 146 (4). pp. 1546-1548. ISSN 0013-4651. https://resolver.caltech.edu/CaltechAUTHORS:GASjes99

1998

Kacsich, T. and Kolawa, E. and Fleurial, J. P. et al. (1998) Films of Ni–7 at% V, Pd, Pt and Ta–Si–N as diffusion barriers for copper on Bi2Te3. Journal of Physics D: Applied Physics, 31 (19). pp. 2406-2411. ISSN 0022-3727. https://resolver.caltech.edu/CaltechAUTHORS:KACjpd98

Grétillat, M.-A. and Linder, C. and Dommann, A. et al. (1998) Surface-micromachined Ta–Si–N beams for use in micromechanics. Journal of Micromechanics and Microengineering, 8 (2). pp. 88-90. ISSN 0960-1317. https://resolver.caltech.edu/CaltechAUTHORS:GREjmm98

Grétillat, M.-A. and Linder, C. and Dommann, A. et al. (1998) Surface-micromachined Ta-Si-N beams for use in micromechanics. Journal of Micromechanics and Microengineering, 8 (2). pp. 88-90. ISSN 0960-1317. https://resolver.caltech.edu/CaltechAUTHORS:20111222-090724822

Gasser, S. M. and Bachli, A. and Kolawa, E. et al. (1998) Reaction sequence of thin Ni films with (001) 3C-SiC. In: European Workshop Materials for Advanced Metallization, Abstracts Booklet. IEEE , Piscataway, NJ, p. 191. https://resolver.caltech.edu/CaltechAUTHORS:20170523-173026955

1997

Im, S. and Song, J. H. and Lie, D. Y. C. et al. (1997) SiGeC alloy layer formation by high-dose C + implantations into pseudomorphic metastable Ge0.08Si0.92 on Si(100). Journal of Applied Physics, 81 (4). pp. 1700-1703. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:IMSjap97

1996

Sun, X. and Schneider, S. and Geyer, U. et al. (1996) Oxidation and crystallization of an amorphous Zr60Al15Ni25 alloy. Journal of Materials Research, 11 (11). pp. 2738-2743. ISSN 0884-2914. https://resolver.caltech.edu/CaltechAUTHORS:SUNjmr96

Reid, J. S. and Kolawa, E. and Garland, C. M. et al. (1996) Amorphous (Mo, Ta, or W)–Si–N diffusion barriers for Al metallizations. Journal of Applied Physics, 79 (2). pp. 1109-1117. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:REIjap96

1995

Dauksher, W. J. and Resnick, D. J. and Cummings, K. D. et al. (1995) Method for fabricating a low stress x-ray mask using annealable amorphous refractory compounds. Journal of Vacuum Science and Technology B, 13 (6). pp. 3103-3108. ISSN 1071-1023. https://resolver.caltech.edu/CaltechAUTHORS:20120216-095821404

1994

McLane, G. F. and Casas, L. and Reid, J. S. et al. (1994) Reactive ion etching of Ta–Si–N diffusion barriers in CF_(4)+O_(2). Journal of Vacuum Science and Technology B, 12 (4). pp. 2352-2355. ISSN 1071-1023. https://resolver.caltech.edu/CaltechAUTHORS:20120306-151931971

1993

Lie, D. Y. C. and Vantomme, A. and Eisen, F. et al. (1993) Damage and strain in epitaxial GexSi1–x films irradiated with Si. Journal of Applied Physics, 74 (10). pp. 6039-6045. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:LIEjap93

1992

Liu, W. S. and Chen, J. S. and Nicolet, M-A. et al. (1992) Instability of a GexSi1−xO2 film on a GexSi1−x layer. Journal of Applied Physics, 72 (9). pp. 4444-4446. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:LIUjap92c

Workman, T. W. and Nicolet, M-A. (1992) D(d,p)T fusion induced by heavy-ion irradiation of TiD1.7. Physical Review B, 46 (13). pp. 8589-8592. ISSN 0163-1829. https://resolver.caltech.edu/CaltechAUTHORS:WORprb92

Bai, G. and Nicolet, M.-A. (1992) Generation and recovery of strain in (28)Si-implanted pseudomorphic GeSi films on Si(100). Journal of Applied Physics, 71 (9). pp. 4227-4229. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:BAIjap92b

Liu, W. S. and Lee, E. W. and Nicolet, M-A. et al. (1992) Wet oxidation of GeSi at (700)C. Journal of Applied Physics, 71 (8). pp. 4015-4018. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:LIUjap92b

Liu, W. S. and Lee, E. W. and Nicolet, M-A. et al. (1992) Importance of sample preheating in oxidation of GexSi1−x. Journal of Applied Physics, 71 (7). pp. 3626-3627. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:LIUjap92a

Bai, G. and Nicolet, M.-A. (1992) Damage production and annealing in 28Si-implanted CoSi2/Sim(111) heterostructures. Journal of Applied Physics, 71 (2). pp. 670-675. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:BAIjap92a

1991

Bai, G. and Nicolet, M.-A. (1991) Defect production in Si(100) by 19F, 28Si, 40Ar, and 131Xe implantation at room temperature. Journal of Applied Physics, 70 (7). pp. 3551-3555. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:BAIjap91c

Chen, J. S. and Kolawa, E. and Garland, C. M. et al. (1991) Epitaxial growth of GaAs by solid-phase transport. Applied Physics Letters, 59 (13). pp. 1597-1599. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:CHEapl91

Pokela, P. J. and Reid, J. S. and Kwok, C.-K. et al. (1991) Thermal oxidation of amorphous ternary Ta36Si14N50 thin films. Journal of Applied Physics, 70 (5). pp. 2828-2832. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:POKjap91

Kolawa, E. and Chen, J. S. and Reid, J. S. et al. (1991) Tantalum-based diffusion barriers in Si/Cu VLSI metallizations. Journal of Applied Physics, 70 (3). pp. 1369-1373. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:KOLjap91

Bai, G. and Nicolet, M.-A. (1991) Defects production and annealing in self-implanted Si. Journal of Applied Physics, 70 (2). pp. 649-655. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:BAIjap91b

Bai, G. and Nicolet, M.-A. and Vreeland, T., Jr. (1991) Elastic and thermal properties of mesotaxial CoSi2 layers on Si. Journal of Applied Physics, 69 (9). pp. 6451-6455. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:BAIjap91a

Tsai, C. J. and Dommann, A. and Nicolet, M. A. et al. (1991) Self-consistent determination of the perpendicular strain profile of implanted Si by analysis of x-ray rocking curves. Journal of Applied Physics, 69 (4). pp. 2076-2079. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:TSAjap91

Morishita, K. and Molarius, J. M. and Kolawa, E. et al. (1991) Arsenic loss during palladium reaction with bulk and thin film gallium arsenide. Thin Solid Films, 196 (1). pp. 85-93. ISSN 0040-6090. https://resolver.caltech.edu/CaltechAUTHORS:20141103-145239247

Mahan, John E. and Geib, Kent M. and Robinson, G. Y. et al. (1991) Reflection high-energy electron diffraction patterns of CrSi_2 films on (111) silicon. Journal of Vacuum Science and Technology B, 9 (1). pp. 64-68. ISSN 1071-1023. https://resolver.caltech.edu/CaltechAUTHORS:20120509-133504606

1990

Vu, Quat T. and Pokela, P. J. and Garden, C. L. et al. (1990) Thermal oxidation of reactively sputtered amorphous W_(80)N_(20) films. Journal of Applied Physics, 68 (12). pp. 6420-6423. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:20120509-153900631

Bai, G. and Nicolet, M-A. and Mahan, John E. et al. (1990) Radiation damage in ReSi2 by a MeV 4He beam. Applied Physics Letters, 57 (16). pp. 1657-1659. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:BAIapl90

Molarius, J. M. and Morishita, K. and Kolawa, E. et al. (1990) Encapsulation of GaAs and GaAs-Pd in furnace annealing. Vacuum, 41 (4-6). pp. 1029-1032. ISSN 0042-207X. https://resolver.caltech.edu/CaltechAUTHORS:20170830-064908540

Bai, G. and Nicolet, M.-A. and Mahan, John E. et al. (1990) Channeling of MeV ions in polyatomic epitaxial films: ReSi2 on Si(100). Physical Review B, 41 (13). pp. 8603-8607. ISSN 0163-1829. https://resolver.caltech.edu/CaltechAUTHORS:BAIprb90

Kolawa, E. and Molarius, J. M. and Nieh, C. W. et al. (1990) Amorphous Ta–Si–N thin‐film alloys as diffusion barrier in Al/Si metallizations. Journal of Vacuum Science and Technology A, 8 (3). pp. 3006-3010. ISSN 0734-2101. https://resolver.caltech.edu/CaltechAUTHORS:20120508-142551386

1989

Bai, Gang and Nicolet, Marc-A. and Vreeland, Thad, Jr. et al. (1989) Strain in epitaxial CoSi2 films on Si (111) and inference for pseudomorphic growth. Applied Physics Letters, 55 (18). pp. 1874-1876. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:BAIapl89

Ma, E. and Nicolet, M-A. and Nathan, M. (1989) NiAl3 formation in Al/Ni thin-film bilayers with and without contamination. Journal of Applied Physics, 65 (7). pp. 2703-2710. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:MAEjap89

Thuillard, M. and Tran, L. T. and Nieh, C. W. et al. (1989) Thermal reaction of Al/Ti bilayers with contaminated interface. Journal of Applied Physics, 65 (6). pp. 2553-2556. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:20120530-151638572

Ma, E. and Workman, T. W. and Johnson, W. L. et al. (1989) Ion mixing of metal/Al bilayers near 77 K. Applied Physics Letters, 54 (5). pp. 413-415. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:MAEapl89

Tandon, J. L. and Madok, J. H. and Leybovich, I. S. et al. (1989) Sequential nature of damage annealing and activation in implanted GaAs. Applied Physics Letters, 54 (5). pp. 448-450. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:TANapl89

1988

Kolawa, E. and Garland, C. and Tran, L. et al. (1988) Indium oxide diffusion barriers for Al/Si metallizations. Applied Physics Letters, 53 (26). pp. 2644-2646. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:KOLapl88

Vreeland, T., Jr. and Dommann, A. and Tsai, C.-J. et al. (1988) X-Ray Diffraction Determination of Stresses in Thin Films. In: Thin films: Stresses and Mechanical Properties. Materials Research Society Symposia Proceedings. No.130. Materials Research Society , Pittsburgh, PA, pp. 3-12. ISBN 9781558990036. https://resolver.caltech.edu/CaltechAUTHORS:20150123-145143727

Ma, W. and Meng, W. J. and Johnson, W. L. et al. (1988) Simultaneous planar growth of amorphous and crystalline Ni silicides. Applied Physics Letters, 53 (21). pp. 2033-2035. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:MAEapl88

So, F. C. T. and Kolawa, E. and Zhao, X.-A. et al. (1988) WxN1–x alloys as diffusion barriers between Al and Si. Journal of Applied Physics, 64 (5). pp. 2787-2789. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:SOFjap88

Zhao, X.-A. and So, F. C. T. and Nicolet, M-A. (1988) TiAl3 formation by furnace annealing of Ti/Al bilayers and the effect of impurities. Journal of Applied Physics, 63 (8). pp. 2600-2607. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:ZHAjap88

Ma, E. and Kim, S.-J. and Nicolet, M.-A. et al. (1988) Ion mixing and thermochemical properties of tracers in Ag. Journal of Applied Physics, 63 (7). pp. 2449-2451. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:MAEjap88

Kim, S.-J. and Nicolet, M-A. and Averback, R. S. et al. (1988) Low-temperature ion-beam mixing in metals. Physical Review B, 37 (1). pp. 38-49. ISSN 0163-1829. https://resolver.caltech.edu/CaltechAUTHORS:KIMprb88

Lim, B. S. and Ma, E. and Nicolet, M-A. et al. (1988) Silicon resistor to measure temperature during rapid thermal annealing. Review of Scientific Instruments, 59 (1). pp. 182-183. ISSN 0034-6748. https://resolver.caltech.edu/CaltechAUTHORS:LIMrsi88

Bai, Gang and Nicolet, Marc-A. and Vreeland, Thad, Jr. et al. (1988) Thermal Strain Measurements in Epitaxial CoSi_2/Si by Double Crystal X-Ray Diffraction. In: Thin films: stresses and mechanical properties. Materials Research Society symposia proceedings. No.130. Materials Research Society , Pittsburgh, PA, pp. 35-40. ISBN 9781558990036. https://resolver.caltech.edu/CaltechAUTHORS:20150211-094052837

1987

So, F. C. T. and Kolawa, E. and Zhao, X.-A. et al. (1987) Summary Abstract: Reactively sputtered RuO2 and Mo–O diffusion barriers. Journal of Vacuum Science and Technology B, 5 (6). pp. 1748-1749. ISSN 1071-1023. https://resolver.caltech.edu/CaltechAUTHORS:SOFjvstb87

Zhao, X.-A. and Yang, H.-Y. and Nicolet, M-A. (1987) Kinetics of NiAl3 growth induced by steady-state thermal annealing at the Ni-<Al> interface. Journal of Applied Physics, 62 (5). pp. 1821-1825. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:ZHAjap87

Lim, B. S. and Ma, E. and Nicolet, M-A. et al. (1987) Kinetics and moving species during Co2Si formation by rapid thermal annealing. Journal of Applied Physics, 61 (11). pp. 5027-5030. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:LIMjap87

Workman, T. W. and Cheng, Y. T. and Johnson, W. L. et al. (1987) Effect of thermodynamics on ion mixing. Applied Physics Letters, 50 (21). pp. 1485-1487. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:WORapl87

Cheng, Y.-T. and Nicolet, M.-A. and Johnson, W. L. (1987) From cascade to spike — a fractal-geometry approach. Physical Review Letters, 58 (20). pp. 2083-2086. ISSN 0031-9007. https://resolver.caltech.edu/CaltechAUTHORS:CHEprl87

Kao, Y. C. and Wang, K. L. and de Fresart, E. et al. (1987) Study of CoSi2/Si strained layers grown by molecular beam epitaxy. Journal of Vacuum Science and Technology B, 5 (3). pp. 745-748. ISSN 1071-1023. https://resolver.caltech.edu/CaltechAUTHORS:KAOjvstb87

Kolawa, E. and So, F. C. T. and Pan, E. T-S. et al. (1987) Reactively sputtered RuO2 diffusion barriers. Applied Physics Letters, 50 (13). pp. 854-855. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:KOLapl87

Banwell, T. and Nicolet, M-A. and Sands, T. et al. (1987) Chemical effects in ion mixing of a ternary system (metal-SiO_2). Applied Physics Letters, 50 (10). pp. 571-573. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:20120622-075340401

Bai, G. and Tsai, C.-J. and Dommann, A. et al. (1987) Characterization of Semiconductors by MeV He+ Backscattering Spectrometry, Channeling and Double Crystal Diffraction. . (Unpublished) https://resolver.caltech.edu/CaltechAUTHORS:20150312-080542685

Bai, G. and Jamieson, D. N. and Nicolet, M-A. et al. (1987) Defects Annealing of Si^+ Implanted GaAs at RT and 100°C. In: Materials Modification and Growth Using Ion Beams. Materials Research Society Symposia Proceedings. No.93. Materials Research Society , Pittsburgh, PA, pp. 67-72. ISBN 9780931837609. https://resolver.caltech.edu/CaltechAUTHORS:20150304-090025874

Banwell, Thomas and Nicolet, M.-A. (1987) Distinguishing anisotropic from isotropic transport in ion mixing of metal/oxide bilayers. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 19-20 . pp. 704-707. ISSN 0168-583X. https://resolver.caltech.edu/CaltechAUTHORS:20170816-144413444

Bai, Gang and Jamieson, David N. and Nicolet, Marc-A. et al. (1987) Misoriented Epitaxial Growth of (111)CoSi_2 on Offset (111)Si Substrates. In: Epitaxy of Semiconductor Layered Structures. Materials Research Society symposia proceedings. No.102. Materials Research Society , Pittsburgh, PA, pp. 259-264. ISBN 9780931837708. https://resolver.caltech.edu/CaltechAUTHORS:20150212-084707790

1986

Zhao, X.-A. and Kolawa, E. and Nicolet, M-A. (1986) Reaction of thin metal films with crystalline and amorphous Al2O3. Journal of Vacuum Science and Technology A, 4 (6). pp. 3139-3141. ISSN 0734-2101. https://resolver.caltech.edu/CaltechAUTHORS:ZHAjvsta86

So, F. C. T. and Kolawa, E. and Kattelus, H. P. et al. (1986) Thermal stability and nitrogen redistribution in the <Si>/Ti/W-N/ AI metallization scheme. Journal of Vacuum Science and Technology A, 4 (6). pp. 3078-3081. ISSN 0734-2101. https://resolver.caltech.edu/CaltechAUTHORS:20120627-125934625

So, F. C. T. and Kolawa, E. and Kattelus, H. P. et al. (1986) Thermal stability and nitrogen redistribution in the〈Si〉/Ti/W–N/Al metallization scheme. Journal of Vacuum Science and Technology A, 4 (6). pp. 3078-3081. ISSN 0734-2101. https://resolver.caltech.edu/CaltechAUTHORS:20120626-155811980

Cheng, Y.-T. and Zhao, X.-A. and Banwell, T. et al. (1986) Correlation between the cohesive energy and the onset of radiation-enhanced diffusion in ion mixing. Journal of Applied Physics, 60 (7). pp. 2615-2617. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:CHEjap86

Kattelus, H. P. and Tandon, J. L. and Sala, C. et al. (1986) Bias-induced stress transitions in sputtered TiN films. Journal of Vacuum Science and Technology A, 4 (4). pp. 1850-1854. ISSN 0734-2101. https://resolver.caltech.edu/CaltechAUTHORS:KATjvsta86

Banwell, Thomas and Nicolet, M.-A. and Averback, R. S. et al. (1986) Effect of dose rate on ion beam mixing in Nb-Si. Applied Physics Letters, 48 (22). pp. 1519-1521. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:20120626-145123709

Banwell, T. C. and Zhao, X.-A. and Nicolet, M.-A. (1986) Effects of ion irradiation on conductivity of CrSi_2 thin films. Journal of Applied Physics, 59 (9). pp. 3077-3080. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:20120626-152109958

1985

So, F. C. T. and Lien, C.-D. and Nicolet, M. -A. (1985) Formation and electrical properties of Hf Si_2 grown thermally from evaporated Hf and Si films. Journal of Vacuum Science and Technology A, 3 (6). pp. 2284-2288. ISSN 0734-2101. https://resolver.caltech.edu/CaltechAUTHORS:20120628-154831998

Kattelus, H. P. and Kolawa, E. and Affolter, K. et al. (1985) Sputtered W–N diffusion barriers. Journal of Vacuum Science and Technology A, 3 (6). pp. 2246-2254. ISSN 0734-2101. https://resolver.caltech.edu/CaltechAUTHORS:KATjvsta85

Cheng, Y.-T. and Johnson, W. L. and Nicolet, M-A. (1985) Dominant moving species in the formation of amorphous NiZr by solid-state reaction. Applied Physics Letters, 47 (6). pp. 800-802. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:CHEapl85a

Affolter, K. and Zhao, X.-A. and Nicolet, M.-A. (1985) Transition-metal silicides formed by ion mixing and by thermal annealing: Which species moves? Journal of Applied Physics, 58 (8). pp. 3087-3083. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:AFFjap85

Van Rossum, M. and Cheng, Y-T. and Nicolet, M-A. et al. (1985) Correlation between cohesive energy and mixing rate in ion mixing of metallic bilayers. Applied Physics Letters, 46 (6). pp. 610-612. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:ROSapl85

Hamdi, A. H. and Speriosu, V. S. and Nicolet, M-A. et al. (1985) Analyses of metalorganic chemical-vapor-deposition-grown AlxGa1−xAs/GaAs strained superlattice structures by backscattering spectrometry and x-ray rocking curves. Journal of Applied Physics, 57 (4). pp. 1400-1402. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:HAMjap85

Hamdi, A. H. and Speriosu, V. S. and Tandon, J. L. et al. (1985) Combined use of ion backscattering and x-ray rocking curves in the analyses of superlattices. Physical Review B, 31 (4). pp. 2343-2347. ISSN 0163-1829. https://resolver.caltech.edu/CaltechAUTHORS:HAMprb85

Speriosu, V. S. and Nicolet, M.-A. and Tandon, J. L. et al. (1985) Interfacial strain in AlxGa1–xAs layers on GaAs. Journal of Applied Physics, 57 (4). pp. 1377-1379. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:SPEjap85

Pan, C. K. and Zheng, D. C. and Finstad, T. G. et al. (1985) Structural study of GaSb/AlSb strained-layer superlattice. Physical Review B, 31 (3). pp. 1270-1277. ISSN 0163-1829. https://resolver.caltech.edu/CaltechAUTHORS:PANprb85

Kim, Sung-Joon and Nicolet, M-A. and Averback, R. S. et al. (1985) Low-temperature ion beam mixing of Pt and Si markers in Ge. Applied Physics Letters, 46 (2). pp. 154-156. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:KIMapl85

Ho, K. T. and Lien, C. D. and Nicolet, M-A. (1985) Palladium silicide formation under the influence of nitrogen and oxygen impurities. Journal of Applied Physics, 57 (2). pp. 232-236. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:HOKjap85a

Zur, A. and McGill, T. C. and Nicolet, M.-A. (1985) Transition-metal silicides lattice-matched to silicon. Journal of Applied Physics, 57 (2). pp. 600-603. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:ZURjap85

Ho, K. T. and Lien, C.-D. and Shreter, U. et al. (1985) An inert marker study for palladium silicide formation: Si moves in polycrystalline Pd2Si. Journal of Applied Physics, 57 (2). pp. 227-231. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:HOKjap85b

Lien, C.-D. and Nicolet, M.-A. and Pai, C. S. (1985) A structure marker study for Pd_2Si formation: Pd moves in epitaxial Pd_2Si. Journal of Applied Physics, 57 (2). pp. 224-226. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:20120628-081537763

1984

Zhu, M. F. and Suni, I. and Nicolet, M.-A. et al. (1984) Reaction of amorphous Ni-W and Ni-N-W films with substrate silicon. Journal of Applied Physics, 56 (10). pp. 2740-2745. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:ZHUjap84

Lien, C. D. and Nicolet, M-A. (1984) Impurity effects in transition metal silicides. Journal of Vacuum Science and Technology B, 2 (4). pp. 738-747. ISSN 1071-1023. https://resolver.caltech.edu/CaltechAUTHORS:LIEjvstb84

Lien, C.-D. and So, F. C. T. and Nicolet, M.-A. (1984) An improved forward I-V method for nonideal Schottky diodes with high series resistance. IEEE Transactions on Electron Devices, 31 (10). pp. 1502-1503. ISSN 0018-9383. https://resolver.caltech.edu/CaltechAUTHORS:20170726-143803541

Van Rossum, M. and Nicolet, M-A. and Wilts, C. H. (1984) Magnetic properties of amorphous thin films produced by ion mixing. Journal of Applied Physics, 56 (4). pp. 1032-1035. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:ROSjap84

Ho, K. T. and Suni, I. and Nicolet, M-A. (1984) Substrate orientation dependence of enhanced epitaxial regrowth of silicon. Journal of Applied Physics, 56 (4). pp. 1207-1212. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:HOKjap84

Speriosu, V. S. and Nicolet, M.-A. and Picraux, S. T. et al. (1984) Depth profiles of perpendicular and parallel strain in a GaAsxP1−x/GaP superlattice. Applied Physics Letters, 45 (3). pp. 223-225. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:SPEapl84

Suni, I. and Shreter, U. and Nicolet, M-A. et al. (1984) Influence of F and Cl on the recrystallization of ion-implanted amorphous Si. Journal of Applied Physics, 56 (2). pp. 273-278. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:SUNjap84

Cheng, Y-T. and Van Rossum, M. and Nicolet, M-A. et al. (1984) Influence of chemical driving forces in ion mixing of metallic bilayers. Applied Physics Letters, 45 (2). pp. 185-187. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:CHEapl84

Lien, C.-D. and Nicolet, M-A. (1984) Mathematical model for a radioactive marker in silicide formation. Journal of Applied Physics, 55 (12). pp. 4187-4193. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:20120702-094830929

Van Rossum, M. and Nicolet, M-A. and Johnson, W. L. (1984) Amorphization of Hf-Ni films by solid-state reaction. Physical Review B, 29 (10). pp. 5498-5504. ISSN 0163-1829. https://resolver.caltech.edu/CaltechAUTHORS:ROSprb84

Shreter, U. and So, Frank C. T. and Nicolet, M-A. (1984) Chromium silicide formation by ion mixing. Journal of Applied Physics, 55 (10). pp. 3500-3504. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:20120702-115714409

Kung, K. T-Y. and Suni, I. and Nicolet, M-A. (1984) Electrical characteristics of amorphous molybdenum-nickel contacts to silicon. Journal of Applied Physics, 55 (10). pp. 3882-3885. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:KUNjap84

Bartur, M. and Nicolet, M.-A. (1984) Utilization of NiSi_2 as an interconnect material for VLSI. IEEE Electron Device Letters, 5 (3). pp. 88-90. ISSN 0741-3106. https://resolver.caltech.edu/CaltechAUTHORS:20170726-174538830

Bartur, M. and Nicolet, M-A. (1984) Self-confined metallic interconnects for very large scale integration. Applied Physics Letters, 44 (2). pp. 263-264. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:BARapl84a

Barcz, A. J. and Paine, B. M. and Nicolet, M-A. (1984) Ion mixing of markers in SiO2 and Si. Applied Physics Letters, 44 (1). pp. 45-47. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:BARapl84c

Hamdi, A. H. and Tandon, J. L. and Vreeland, T., Jr. et al. (1984) Strain and Damage Measurements in Ion Implanted Al_xGa_(1−x)As/GaAs Superlattices. In: Layered structures, epitaxy, and interfaces. Materials Research Society symposia proceedings. No.37. Materials Research Society , Pittsburgh, PA, pp. 319-325. ISBN 9780931837029. https://resolver.caltech.edu/CaltechAUTHORS:20150206-151636897

1983

Prabhakar, A. and McGill, T. C. and Nicolet, M.-A. (1983) Platinum diffusion into silicon from PtSi. Applied Physics Letters, 43 (12). pp. 1118-1120. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:PRAapl83

Hung, L. S. and Gyulai, J. and Mayer, J. W. et al. (1983) Kinetics of TiSi2 formation by thin Ti films on Si. Journal of Applied Physics, 54 (9). pp. 5076-5080. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:HUNjap83

Bartur, M. and Nicolet, M-A. (1983) Marker experiments for diffusion in the silicide during oxidation of PdSi, Pd2Si, CoSi2, and NiSi2 films on <Si>. Journal of Applied Physics, 54 (9). pp. 5404-5415. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:BARjap83

Shreter, U. and Fernandez, R. and Nicolet, M-A. (1983) Temperature-dependent ion mixing and diffusion during sputtering of thin films of CrSi_2 on silicon. Applied Physics Letters, 43 (3). pp. 247-249. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:20120717-090516601

Finetti, M. and Pan, E. T-S. and Suni, I. et al. (1983) Electrical characteristics of amorphous iron-tungsten contacts on silicon. Applied Physics Letters, 42 (11). pp. 987-989. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:FINapl83

Liu, B. X. and Clemens, B. M. and Gaboriaud, R. et al. (1983) Ion mixing to produce amorphous Mo-Ru superconducting films. Applied Physics Letters, 42 (7). pp. 624-626. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:LIUapl83b

Liu, Bai-Xin and Johnson, W. L. and Nicolet, M-A. et al. (1983) Structural difference rule for amorphous alloy formation by ion mixing. Applied Physics Letters, 42 (1). pp. 45-47. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:LIUapl83a

Matteson, S. and Nicolet, M-A. (1983) Ion Mixing. Annual Review of Materials Science, 13 . pp. 339-362. ISSN 0084-6600. https://resolver.caltech.edu/CaltechAUTHORS:20120713-112400215

1982

Speriosu, V. S. and Paine, B. M. and Nicolet, M-A. et al. (1982) X-ray rocking curve study of Si-implanted GaAs, Si, and Ge. Applied Physics Letters, 40 (7). pp. 604-606. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:SPEapl82

Suni, I. and Göltz, G. and Grimaldi, M. G. et al. (1982) Compensating impurity effect on epitaxial regrowth rate of amorphized Si. Applied Physics Letters, 40 (3). pp. 269-271. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:SUNapl82

Mäenpää, M. and Kuech, T. F. and Nicolet, M-A. et al. (1982) The heteroepitaxy of Ge on Si: A comparison of chemical vapor and vacuum deposited layers. Journal of Applied Physics, 53 (2). pp. 1076-1083. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:MAEjap82

Wieluński, L. S. and Lien, C. -D. and Liu, B. X. et al. (1982) Improvement of thermally formed nickel silicide by ion irradiation. Journal of Vacuum Science and Technology, 20 (2). pp. 182-185. ISSN 0022-5355. https://resolver.caltech.edu/CaltechAUTHORS:20120716-160347437

Bartur, M. and Nicolet, M-A. (1982) Thermal oxidation of nickel disilicide. Applied Physics Letters, 40 (2). pp. 175-177. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:BARapl82a

1981

Bartur, M. and Nicolet, M-A. (1981) Electrical characteristics of Al contact to NiSi using thin W layer as a barrier. Applied Physics Letters, 39 (10). pp. 822-824. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:BARapl81

Nicolet, M-A. and Bartur, M. (1981) Diffusion barriers in layered contact structures. Journal of Vacuum Science and Technology, 19 (3). pp. 786-793. ISSN 0022-5355. https://resolver.caltech.edu/CaltechAUTHORS:NICjvst81

Grunthaner, P. J. and Grunthaner, F. J. and Scott, D. M. et al. (1981) Oxygen impurity effects at metal/silicide interfaces: Formation of silicon oxide and suboxides in the Ni/Si system. Journal of Vacuum Science and Technology, 19 (3). pp. 641-648. ISSN 0022-5355. https://resolver.caltech.edu/CaltechAUTHORS:GRUjvst81

Grimaldi, M. G. and Paine, B. M. and Mäenpää, M. et al. (1981) Epitaxial regrowth of thin amorphous GaAs layers. Applied Physics Letters, 39 (1). pp. 70-72. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:GRIapl81

Grimaldi, M. G. and Paine, B. M. and Nicolet, M-A. et al. (1981) Ion implantation and low-temperature epitaxial regrowth of GaAs. Journal of Applied Physics, 52 (6). pp. 4038-4046. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:20120717-155107148

Tsaur, B. Y. and Lau, S. S. and Mayer, J. W. et al. (1981) Sequence of phase formation in planar metal-Si reaction couples. Applied Physics Letters, 38 (11). pp. 922-924. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:TSAapl81

Cheung, N. W. and von Seefeld, H. and Nicolet, M-A. et al. (1981) Thermal stability of titanium nitride for shallow junction solar cell contacts. Journal of Applied Physics, 52 (6). pp. 4297-4299. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:CHEjap81

Grimaldi, M. G. and Mäenpää, M. and Paine, B. M. et al. (1981) Epitaxial growth of amorphous Ge films deposited on single-crystal Ge. Journal of Applied Physics, 52 (3). pp. 1351-1355. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:GRIjap81

Wieluński, L. and Scott, D. M. and Nicolet, M-A. et al. (1981) Alteration of Ni silicide formation by N implantation. Applied Physics Letters, 38 (2). pp. 106-108. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:20120719-133310810

1980

Tsaur, B. Y. and Nicolet, M-A. (1980) Reversible phase transformation in the Pd2Si-PdSi thin-film system. Applied Physics Letters, 37 (8). pp. 708-711. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:TSAapl80

Masuyama, A. and Nicolet, M.-A. and Golecki, I. et al. (1980) Steady-state thermally annealed GaAs with room-temperature-implanted Si. Applied Physics Letters, 36 (9). pp. 749-751. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:MASapl80

von Seefeld, Hermann and Cheung, Nathan W. and Mäenpää, Martti et al. (1980) Investigation of titanium-nitride layers for solar-cell contacts. IEEE Transactions on Electron Devices, 27 (4). pp. 873-876. ISSN 0018-9383. https://resolver.caltech.edu/CaltechAUTHORS:20170802-155903092

Campisano, S. U. and Foti, G. and Rimini, E. et al. (1980) Laser pulse annealing of ion-implanted GaAs. Journal of Applied Physics, 51 (1). pp. 295-298. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:CAMjap80

1979

Tandon, J. L. and Golecki, I. and Nicolet, M-A. et al. (1979) Pulsed electron beam induced recrystallization and damage in GaAs. Applied Physics Letters, 35 (11). pp. 867-870. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:TANapl79c

Tsaur, B. Y. and Matteson, S. and Chapman, G. et al. (1979) Depth dependence of atomic mixing by ion beams. Applied Physics Letters, 35 (10). pp. 825-828. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:TSAapl79

Roulet, M. E. and Schwob, P. and Golecki, I. et al. (1979) Electrical properties of silicon-implanted furnace-annealed silicon-on-sapphire devices. Electronics Letters, 15 (17). pp. 527-529. ISSN 0013-5194. https://resolver.caltech.edu/CaltechAUTHORS:20170807-155031287

Lau, S. S. and von Allmen, M. and Golecki, I. et al. (1979) Solar furnace annealing of amorphous Si layers. Applied Physics Letters, 35 (4). pp. 327-329. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:LAUapl79

Roulet, M. E. and Schwob, P. and Affolter, K. et al. (1979) Laser annealing of silicon on sapphire. Journal of Applied Physics, 50 (8). pp. 5536-5538. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:ROUjap79

Tandon, J. L. and Nicolet, M-A. and Tseng, W. F. et al. (1979) Pulsed-laser annealing of implanted layers in GaAs. Applied Physics Letters, 34 (9). pp. 597-599. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:TANapl79b

Matteson, S. and Tonn, D. G. and Nicolet, M-A. (1979) Diagnostic test for ion implantation dosimetry. Journal of Vacuum Science and Technology, 16 (3). pp. 882-883. ISSN 0022-5355. https://resolver.caltech.edu/CaltechAUTHORS:20120726-110219420

Tandon, J. L. and Nicolet, M-A. and Eisen, F. H. (1979) Silicon implantation in GaAs. Applied Physics Letters, 34 (2). pp. 165-167. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:TANapl79a

von Allmen, M. and Lüthy, W. and Thomas, J. P. et al. (1979) Influence of the absorption coefficient in Nd laser annealing of amorphized semiconductor layers. Applied Physics Letters, 34 (1). pp. 82-84. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:20120727-101306063

Finstad, T. G. and Nicolet, M-A. (1979) Silicide formation with bilayers of Pd-Pt, Pd-Ni, and Pt-Ni. Journal of Applied Physics, 50 (1). pp. 303-307. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:FINjap79

1978

Lau, S. S. and Tseng, W. F. and Nicolet, M-A. et al. (1978) Heteroepitaxy of deposited amorphous layer by pulsed electron-beam irradiation. Applied Physics Letters, 33 (3). pp. 235-237. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:LAUapl78b

Lau, S. S. and Tseng, W. F. and Nicolet, M-A. et al. (1978) Epitaxial growth of deposited amorphous layer by laser annealing. Applied Physics Letters, 33 (2). pp. 130-131. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:LAUapl78a

1977

Mayer, James W. and Kullen, R. Philip and Nicolet, Marc A. et al. (1977) Use of ion beams in space. Journal of Vacuum Science and Technology, 14 (6). p. 1281. ISSN 0022-5355. https://resolver.caltech.edu/CaltechAUTHORS:20120803-103105025

Pretorius, R. and Liau, Z. L. and Lau, S. S. et al. (1977) Growth mechanism for solid-phase epitaxy of Si in the Si <100>/Pd2Si/Si(amorphous) system studied by a radioactive tracer technique. Journal of Applied Physics, 48 (7). pp. 2886-2890. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:PREjap77

Harris, J. M. and Blattner, R. J. and Ward, I. D. et al. (1977) Solid-phase crystallization of Si films in contact with Al layers. Journal of Applied Physics, 48 (7). pp. 2897-2904. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:HARjap77

Wittmer, W. and Finstad, T. and Nicolet, M-A. (1977) Investigation of the Au-Ge-Ni and Au-Ge-Pt system used for alloyed contacts to GaAs. Journal of Vacuum Science and Technology, 14 (4). pp. 935-936. ISSN 0022-5355. https://resolver.caltech.edu/CaltechAUTHORS:20120802-111429967

Pretorius, R. and Ramiller, C. L. and Lau, S. S. et al. (1977) Radioactive silicon as a marker in thin-film silicide formation. Applied Physics Letters, 30 (10). pp. 501-503. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:PREapl77

Lau, S. S. and Liau, Z. L. and Nicolet, M-A. et al. (1977) Heterostructure by solid‐phase epitaxy in the Si〈111〉/Pd/Si (amorphous) system. Journal of Applied Physics, 48 (3). pp. 917-919. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:20120808-085747179

1976

Olowolafe, J. O. and Nicolet, M.-A. and Mayer, J. W. (1976) Formation kinetics of CrSi2 films on Si substrates with and without interposed Pd2Si layer. Journal of Applied Physics, 47 (12). pp. 5182-5186. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:OLOjap76

Pretorius, R. and Liau, Z. L. and Lau, S. S. et al. (1976) Dissociation mechanism for solid-phase epitaxy of silicon in the Si <100>/Pd2Si/Si (amorphous) system. Applied Physics Letters, 29 (9). pp. 598-600. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:PREapl76

Nakamura, K. and Olowolafe, J. O. and Lau, S. S. et al. (1976) Interaction of metal layers with polycrystalline Si. Journal of Applied Physics, 47 (4). pp. 1278-1283. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:NAKjap76

Nakamura, K. and Lau, S. S. and Nicolet, M-A. et al. (1976) Ti and V layers retard interaction between Al films and polycrystalline Si. Applied Physics Letters, 28 (5). pp. 277-280. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:NAKapl76

Lau, S. S. and Canali, C. and Liau, Z. L. et al. (1976) Antimony doping of Si layers grown by solid-phase epitaxy. Applied Physics Letters, 28 (3). pp. 148-150. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:LAUapl76

Scherzer, B. M. U. and Børgesen, P. and Nicolet, M-A. et al. (1976) Determination of Stopping Cross Sections by Rutherford Backscattering. In: Ion Beam Surface Layer Analysis. Vol.1. Springer , Boston, MA, pp. 33-46. ISBN 978-1-4615-8878-8. https://resolver.caltech.edu/CaltechAUTHORS:20180830-103505467

1975

Nakamura, K. and Nicolet, M-A. and Mayer, J. W. et al. (1975) Interaction of Al layers with polycrystalline Si. Journal of Applied Physics, 46 (11). pp. 4678-4684. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:NAKjap75

Feng, J. S.-Y. and Pashley, R. D. and Nicolet, M.-A. (1975) Magnetoelectric properties of magnetite thin films. Journal of Physics C: Solid State Physics, 8 (7). pp. 1010-1022. ISSN 0022-3719. https://resolver.caltech.edu/CaltechAUTHORS:FENjpcss75

Malm, H. L. and Canali, C. and Mayer, J. W. et al. (1975) Gamma–ray spectroscopy with single–carrier collection in high–resistivity semiconductors. Applied Physics Letters, 26 (6). pp. 344-346. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:MALapl75

Harris, J. M. and Nicolet, M-A. (1975) Energy straggling of 4He ions below 2.0 MeV in Al, Ni, and Au. Physical Review B, 11 (3). pp. 1013-1019. ISSN 0163-1829. https://resolver.caltech.edu/CaltechAUTHORS:HARprb75

Mayer, J. W. and Nicolet, M-A. and Chu, W. K. (1975) Backscattering spectrometry. Journal of Vacuum Science and Technology, 12 (1). p. 356. ISSN 0022-5355. https://resolver.caltech.edu/CaltechAUTHORS:20120803-104952611

Harris, J. M. and Nicolet, M-A. (1975) Energy straggling of 4He ions below 2.0 MeV in Al, Ni, Pt, and Au. Journal of Vacuum Science and Technology, 12 (1). pp. 439-443. ISSN 0022-5355. https://resolver.caltech.edu/CaltechAUTHORS:HARjvst75b

Harris, J. M. and Lugujjo, E. and Campisano, S. U. et al. (1975) Studies on the Al2O3–Ti–Mo–Au metallization system. Journal of Vacuum Science and Technology, 12 (1). pp. 524-527. ISSN 0022-5355. https://resolver.caltech.edu/CaltechAUTHORS:HARjvst75a

1974

Feng, J. S.-Y. and Chu, W. K. and Nicolet, M-A. (1974) Stopping-cross-section additivity for 1-2-MeV 4He+ in solid oxides. Physical Review B, 10 (9). pp. 3781-3789. ISSN 0556-2805. https://resolver.caltech.edu/CaltechAUTHORS:FENprb74

Chu, W. K. and Kraütle, H. and Mayer, J. W. et al. (1974) Identification of the dominant diffusing species in silicide formation. Applied Physics Letters, 25 (8). pp. 454-457. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:CHUapl74

Kräutle, H. and Nicolet, M-A. and Mayer, J. W. (1974) Kinetics of silicide formation by thin films of V on Si and SiO_2 substrates. Journal of Applied Physics, 45 (8). pp. 3304-3308. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:20120809-110703213

1972

Nicolet, M.-A. and Mayer, J. W. and Mitchell, I. V. (1972) Microanalysis of Materials by Backscattering Spectrometry. Science, 177 (4052). pp. 841-849. ISSN 0036-8075. https://resolver.caltech.edu/CaltechAUTHORS:20151111-095217502

Feng, Joseph S.-Y. and Bajorek, Christopher H. and Nicolet, Marc-A. (1972) Magnetite thin films. IEEE Transactions on Magnetics, 8 (3). pp. 277-278. ISSN 0018-9464. https://resolver.caltech.edu/CaltechAUTHORS:20170810-154316923

Ottaviani, G. and Marrello, V. and Mayer, J. W. et al. (1972) Formation of Injecting and Blocking Contacts on High-Resistivity Germanium. Applied Physics Letters, 20 (8). pp. 323-325. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:OTTapl72

1971

Hoeneisen, B. and Mead, C. A. and Nicolet, M-A. (1971) Permittivity of β-Ga_2O_3 at low frequencies. Solid-State Electronics, 14 (10). pp. 1057-1059. ISSN 0038-1101. https://resolver.caltech.edu/CaltechAUTHORS:20150929-092908338

Bajorek, C. H. and Nicolet, M.-A. and Wilts, C. H. (1971) Preferential Oxidation of Fe in Permalloy Films. Applied Physics Letters, 19 (4). pp. 82-84. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:BAJapl71

Hiraki, A. and Nicolet, M-A. and Mayer, J. W. (1971) Low-temperature migration of silicon in thin layers of gold platinum. Applied Physics Letters, 18 (5). pp. 178-181. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:HIRapl71

1970

Bilger, H. R. and Nicolet, M.-A. (1970) A Flexible Simple Thermostat for Small Objects and the Range of 100 to 400 K. Review of Scientific Instruments, 41 (3). pp. 346-347. ISSN 0034-6748. https://resolver.caltech.edu/CaltechAUTHORS:20120730-121345445

1969

Lee, D. H. and Nicolet, M. -A. (1969) Thermal noise in double injection. Physical Review, 184 (3). pp. 806-808. ISSN 0031-899X. https://resolver.caltech.edu/CaltechAUTHORS:LEEpr69

Rodriguez, V. and Nicolet, M-A. (1969) Drift velocity of electrons in silicon at high electric fields from 4.2° to 300°K. Journal of Applied Physics, 40 (2). pp. 496-498. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:RODjap69

1968

Bilger, H. R. and Lee, D. H. and Nicolet, M-A. et al. (1968) Noise and Equivalent Circuit of Double Injection. Journal of Applied Physics, 39 (13). pp. 5913-5918. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:20120827-112350834

1967

Rodriguez, V. and Ruegg, H. and Nicolet, M.-A. (1967) Measurement of the drift velocity of holes in silicon at high-field strengths. IEEE Transactions on Electron Devices, 14 (1). pp. 44-46. ISSN 0018-9383. https://resolver.caltech.edu/CaltechAUTHORS:20170814-171148315

1966

Nicolet, M.-A. and Bilger, H. R. and McCarter, E. R. (1966) Noise suppression in a double-injection silicon diode. Applied Physics Letters, 9 (12). pp. 434-436. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:NICapl66

Nicolet, M-A. (1966) Unipolar space-charge-limited current in solids with nonuniform spacial distribution of shallow traps. Journal of Applied Physics, 37 (11). pp. 4224-4235. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:NICjap66

Baron, R. and Nicolet, M-A. and Rodriguez, V. (1966) Differential Step Response of Unipolar Space-Charge-Limited Current in Solids. Journal of Applied Physics, 37 (11). pp. 4156-4158. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:20120827-110918315

Denda, S. and Nicolet, M-A. (1966) Pure Space-Charge-Limited Electron Current in Silicon. Journal of Applied Physics, 37 (6). pp. 2412-2424. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:20120828-070404189

This list was generated on Mon Aug 3 05:32:04 2020 PDT.