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Items where Person is "Nieh-C-W"

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Jump to: 1991 | 1990 | 1989 | 1988 | 1987
Number of items: 18.

1991

Kittl, J. A. and Johnson, W. L. and Nieh, C. W. (1991) Lattice distortions in YBa2Cu3O7–delta thin films grown in situ by sequential ion beam sputtering. Journal of Applied Physics, 69 (9). pp. 6710-6712. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:KITjap91

1990

Kittl, J. A. and Nieh, C. W. and Lee, D. S. et al. (1990) Correlations between deposition parameters and structural and electrical properties of YBa2Cu3O7–delta thin films grown in situ by sequential ion beam sputtering. Applied Physics Letters, 56 (24). pp. 2468-2470. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:KITapl90

Kolawa, E. and Molarius, J. M. and Nieh, C. W. et al. (1990) Amorphous Ta–Si–N thin‐film alloys as diffusion barrier in Al/Si metallizations. Journal of Vacuum Science and Technology A, 8 (3). pp. 3006-3010. ISSN 0734-2101. https://resolver.caltech.edu/CaltechAUTHORS:20120508-142551386

1989

Nieh, C. W. and Lin, T. L. (1989) In situ transmission electron microscopy study on the epitaxial growth of CoSi2 on Si(111) at temperatures below 150 °C. Journal of Applied Physics, 66 (7). pp. 3402-3404. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:NIEjap89

Fathauer, R. W. and Nieh, C. W. and Xiao, Q. F. et al. (1989) Growth of single-crystal columns of CoSi2 embedded in epitaxial Si on Si(111) by molecular beam epitaxy. Applied Physics Letters, 55 (3). pp. 247-249. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:FATapl89

Hoenk, Michael E. and Nieh, C. W. and Chen, Howard Z. et al. (1989) Compositional modulation in AlxGa1−xAs epilayers grown by molecular beam epitaxy on the (111) facets of grooves in a nonplanar substrate. Applied Physics Letters, 55 (1). pp. 53-55. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:HOEapl89b

Xiong, Fulin and Nieh, C. W. and Tombrello, T. A. (1989) Cross-sectional and high resolution TEM studies of structural phase transitions in MeV-ion-implanted InP crystals. Ultramicroscopy, 30 (1-2). pp. 242-248. ISSN 0304-3991. https://resolver.caltech.edu/CaltechAUTHORS:20141029-101630220

Ingemarsson, P. Anders and Sundqvist, Bo U. R. and Nieh, C. W. et al. (1989) Radiation-induced interface phenomena: Decoration of high-energy density ion tracks. Applied Physics Letters, 54 (16). pp. 1513-1515. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:INGapl89

Thuillard, M. and Tran, L. T. and Nieh, C. W. et al. (1989) Thermal reaction of Al/Ti bilayers with contaminated interface. Journal of Applied Physics, 65 (6). pp. 2553-2556. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:20120530-151638572

Jackson, M. K. and Johnson, M. B. and Chow, D. H. et al. (1989) Electron tunneling time measured by photoluminescence excitation correlation spectroscopy. Applied Physics Letters, 54 (6). pp. 552-554. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:JACapl89a

Xiong, Fulin and Nieh, C. W. and Tombrello, T. A. et al. (1989) Characterization of high-energy heavy-ion implanted InP crystals by a variety of techniques. Vacuum, 39 (2-4). pp. 177-182. ISSN 0042-207X. https://resolver.caltech.edu/CaltechAUTHORS:20141029-113534421

1988

Kolawa, E. and Garland, C. and Tran, L. et al. (1988) Indium oxide diffusion barriers for Al/Si metallizations. Applied Physics Letters, 53 (26). pp. 2644-2646. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:KOLapl88

Clemens, B. M. and Nieh, C. W. and Kittl, J. A. et al. (1988) Nucleation and growth of YBaCuO on SrTiO3. Applied Physics Letters, 53 (19). pp. 1871-1873. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:CLEapl88

Miles, R. H. and Chow, P. P. and Johnson, D. C. et al. (1988) Accommodation of lattice mismatch in Ge_(x)Si_(1−x)/Si superlattices. Journal of Vacuum Science and Technology B, 6 (4). pp. 1382-1385. ISSN 1071-1023. https://resolver.caltech.edu/CaltechAUTHORS:20120607-134521339

Mii, Y. J. and Lin, T. J. and Kao, Y. C. et al. (1988) Studies of molecular-beam epitaxy growth of GaAs on porous Si substrates. Journal of Vacuum Science and Technology B, 6 (2). pp. 696-701. ISSN 1071-1023. https://resolver.caltech.edu/CaltechAUTHORS:MIIjvstb88

Xiong, Fulin and Nieh, C. W. and Jamieson, D. N. et al. (1988) Amorphization and recrystallization in MeV ion implanted InP crystals. In: Fundamentals of Beam-Solid Interactions and Transient Thermal Processing. Materials Research Society symposia proceedings. No.100. Materials Research Society , Pittsburgh, PA, pp. 105-111. ISBN 9780931837685. https://resolver.caltech.edu/CaltechAUTHORS:20150325-075224816

Nieh, C. W. and Xiong, F. and Ahn, C. C. et al. (1988) Formation of Buried Oxide in MeV Oxygen Implanted Silicon. In: Silicon-on-Insulator and Buried Metals in Semiconductors. Materials Research Society symposia proceedings. No.107. Materials Research Society , Pittsburgh, PA, pp. 73-78. ISBN 9780931837753. https://resolver.caltech.edu/CaltechAUTHORS:20150211-120450224

1987

Meng, W. J. and Nieh, C. W. and Johnson, W. L. (1987) Maximum thickness of amorphous NiZr interlayers formed by a solid-state reaction technique. Applied Physics Letters, 51 (21). pp. 1693-1695. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:MENapl87b

This list was generated on Mon Aug 3 14:35:14 2020 PDT.