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Items where Person is "Rai-R-S"

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Jump to: 1989 | 1987
Number of items: 4.

1989

Rai, R. S. and Guruswamy, S. and Faber, K. T. et al. (1989) Dislocation structures in In-doped and undoped GaAs deformed at 700-1100°C. Philosophical Magazine A, 60 (3). pp. 339-353. https://resolver.caltech.edu/CaltechAUTHORS:20140908-181330183

Guruswamy, S. and Rai, R. S. and Faber, K. T. et al. (1989) Influence of solute doping on the high-temperature deformation behavior of GaAs. Journal of Applied Physics, 65 (6). pp. 2508-2512. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:20140908-181330279

1987

Guruswamy, S. and Rai, R. S. and Faber, K. T. et al. (1987) Deformation behavior of undoped and In-doped GaAs in the temperature range 700–1100 °C. Journal of Applied Physics, 62 (10). pp. 4130-4134. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:20140908-181330496

Rai, R. S. and Faber, K. T. and Guruswamy, S. et al. (1987) TEM Studies of Dislocations in Deformed Ga_(x)In_(1-x)As Single Crystals. In: Proceedings of the 45th Annual Meeting of the Electron Microscopy Society of America. San Francisco Press , San Francisco, CA, pp. 320-321. https://resolver.caltech.edu/CaltechAUTHORS:20140915-114401795

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