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Items where Person is "Sadana-D-K"

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Jump to: 1989 | 1982 | 1981 | 1980 | 1979
Number of items: 6.


Xiong, Fulin and Tombrello, T. A. and Wang, H. et al. (1989) Fabrication of GaAs/AlGaAs Quantum Well Lasers with MeV Oxygen Ion Implantation. In: Advances in materials, processing, and devices in III-V compound semiconductors. Materials Research Society symposia proceedings. No.144. Materials Research Society , Pittsburgh, PA, pp. 367-372. ISBN 1-55899-017-8.


Mäenpää, M. and Kuech, T. F. and Nicolet, M-A. et al. (1982) The heteroepitaxy of Ge on Si: A comparison of chemical vapor and vacuum deposited layers. Journal of Applied Physics, 53 (2). pp. 1076-1083. ISSN 0021-8979.


Grimaldi, M. G. and Paine, B. M. and Mäenpää, M. et al. (1981) Epitaxial regrowth of thin amorphous GaAs layers. Applied Physics Letters, 39 (1). pp. 70-72. ISSN 0003-6951.

Grimaldi, M. G. and Paine, B. M. and Nicolet, M-A. et al. (1981) Ion implantation and low-temperature epitaxial regrowth of GaAs. Journal of Applied Physics, 52 (6). pp. 4038-4046. ISSN 0021-8979.


Masuyama, A. and Nicolet, M.-A. and Golecki, I. et al. (1980) Steady-state thermally annealed GaAs with room-temperature-implanted Si. Applied Physics Letters, 36 (9). pp. 749-751. ISSN 0003-6951.


Tandon, J. L. and Golecki, I. and Nicolet, M-A. et al. (1979) Pulsed electron beam induced recrystallization and damage in GaAs. Applied Physics Letters, 35 (11). pp. 867-870. ISSN 0003-6951.

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