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Items where Person is "Smith-D-L"

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Jump to: 2002 | 1989 | 1987 | 1984 | 1983 | 1981 | 1980 | 1979 | 1975
Number of items: 17.

2002

Ting, D. Z.-Y. and Cartoixà, X. and McGill, T. C. et al. (2002) Modeling Spin-Dependent Transport in InAs/GaSb/AlSb Resonant Tunneling Structures. Journal of Computational Electronics, 1 (1-2). pp. 147-151. ISSN 1569-8025. https://resolver.caltech.edu/CaltechAUTHORS:20200103-162108300

1989

Wu, G. Y. and McGill, T. C. and Mailhiot, C. et al. (1989) k⋅p theory of semiconductor superlattice electronic structure in an applied magnetic field. Physical Review B, 39 (9). pp. 6060-6070. ISSN 0163-1829. https://resolver.caltech.edu/CaltechAUTHORS:WUGprb89a

1987

Wu, G. Y. and McGill, T. C. and Smith, D. L. et al. (1987) Theoretical studies of electronic properties of semimagnetic superlattices in a magnetic field. Journal of Vacuum Science and Technology B, 5 (5). pp. 3096-3101. ISSN 1071-1023. https://resolver.caltech.edu/CaltechAUTHORS:WUGjvsta87

1984

Mailhiot, C. and McGill, T. C. and Smith, D. L. (1984) New approach to the k·p theory of semiconductor superlattices. Journal of Vacuum Science and Technology B, 2 (3). pp. 371-375. ISSN 1071-1023. https://resolver.caltech.edu/CaltechAUTHORS:MAIjvstb84

Smith, D. L. and McGill, T. C. (1984) HgTe-CdTe Superlattices. Journal de Physique Colloques, 45 (C5). pp. 509-513. ISSN 0449-1947. https://resolver.caltech.edu/CaltechAUTHORS:20200318-154418910

1983

Zur, A. and McGill, T. C. and Smith, D. L. (1983) Fermi-level position at a semiconductor-metal interface. Physical Review B, 28 (4). pp. 2060-2067. ISSN 0163-1829. https://resolver.caltech.edu/CaltechAUTHORS:ZURprb83

Zur, A. and McGill, T. C. and Smith, D. L. (1983) Summary Abstract: The effect of doping on Fermi level position at a semiconductor–metal interface. Journal of Vacuum Science and Technology B, 1 (3). pp. 608-609. ISSN 1071-1023. https://resolver.caltech.edu/CaltechAUTHORS:ZURjvstb83

Mailhiot, C. and Smith, D. L. and McGill, T. C. (1983) Transport characteristics of L-point and Г-point electrons through GaAs-Ga_(1-x)Ai_xAs-GaAs(111} double heterojunctions. Journal of Vacuum Science and Technology B, 1 (3). pp. 637-642. ISSN 1071-1023. https://resolver.caltech.edu/CaltechAUTHORS:20120712-124524007

McGill, T. C. and Smith, D. L. (1983) Summary Abstract: HgTe–CdTe superlattices. Journal of Vacuum Science and Technology B, 1 (2). pp. 260-261. ISSN 1071-1023. https://resolver.caltech.edu/CaltechAUTHORS:MCGjvstb83

1981

Daw, M. S. and Smith, D. L. and McGill, T. C. (1981) Surface core excitons in III-V semiconductors. Journal of Vacuum Science and Technology, 19 (3). pp. 388-389. ISSN 0022-5355. https://resolver.caltech.edu/CaltechAUTHORS:20120718-104550766

Daw, M. S. and Smith, D. L. and Swarts, C. A. et al. (1981) Surface vacancies in II-VI and III-V zinc blende semiconductors. Journal of Vacuum Science and Technology, 19 (3). pp. 508-512. ISSN 0022-5355. https://resolver.caltech.edu/CaltechAUTHORS:20120717-163206505

1980

Daw, M. S. and Smith, D. L. (1980) Energy levels of semiconductor surface vacancies. Journal of Vacuum Science and Technology, 17 (5). pp. 1028-1031. ISSN 0022-5355. https://resolver.caltech.edu/CaltechAUTHORS:20120718-141135113

Hunter, A. T. and Smith, D. L. and McGill, T. C. (1980) Near-band‐gap photoluminescence of Hg_(1−x)Cd_xTe. Applied Physics Letters, 37 (2). pp. 200-203. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:20180702-153655592

1979

Hunter, A. T. and Lyon, S. A. and Smith, D. L. et al. (1979) Transient decay of satellite lines of bound excitons in Si: P. Physical Review B, 20 (6). pp. 2431-2437. ISSN 2469-9950. https://resolver.caltech.edu/CaltechAUTHORS:20180702-101720986

Osbourn, G. C. and Smith, D. L. (1979) Carrier transport coefficients across GaAs-GaAIAs (100) interfaces. Journal of Vacuum Science and Technology, 16 (5). pp. 1529-1532. ISSN 0022-5355. https://resolver.caltech.edu/CaltechAUTHORS:20120726-112918493

1975

Hammond, R. B. and Smith, D. L. and McGill, T. C. (1975) Temperature dependence of silicon luminescence due to splitting of the indirect ground state. Physical Review Letters, 35 (22). pp. 1535-1538. ISSN 0031-9007. https://resolver.caltech.edu/CaltechAUTHORS:HAMprl75

Smith, D. L. and Pan, D. S. and McGill, T. C. (1975) Impact ionization of excitons in Ge and Si. Physical Review B, 12 (10). pp. 4360-4366. ISSN 0163-1829. https://resolver.caltech.edu/CaltechAUTHORS:SMIprb75

This list was generated on Fri May 14 12:27:42 2021 PDT.