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Published March 1977 | Published
Journal Article Open

Heterostructure by solid‐phase epitaxy in the Si〈111〉/Pd/Si (amorphous) system


When a thin film of Pd reacts with a 〈111〉 Si substrate, a layer of epitaxial Pd_2Si is formed. It is shown that Si can grow epitaxially on such a layer by solid‐phase reaction.

Additional Information

© 1977 American Institute of Physics. Received 15 October 1976. Online Publication Date: 26 August 2008. The financial support of the Office of Naval Research ( L. Cooper and D. Ferry) is gratefully acknowledged. The authors are also thankful to J. Mallory and R. Gorris for technical assistance and to C. Canali and S. U. Campisano for helpful discussions,

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August 19, 2023
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