Published July 1970
| public
Journal Article
Physical model for burst noise in semiconductor devices
- Creators
- Hsu, S. T.
- Whittier, R. J.
- Mead, C. A.
Abstract
A physical model for burst noise in p−n junction devices is presented. It is proposed that burst noise results when the current through a defect is modulated by a change in the charge state of a single recombination-generation center located adjacent to the defect. The burst noise amplitude and pulse widths are related to the basic properties of the recombination-generation center and the defect. The model leads to a simple interpretation of the equivalent circuit for diodes which exhibit this type of noise.
Additional Information
© 1970 Pergamon Press. Received 10 November 1969.Additional details
- Eprint ID
- 54795
- Resolver ID
- CaltechAUTHORS:20150212-155102555
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2015-02-13Created from EPrint's datestamp field
- Updated
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2021-11-10Created from EPrint's last_modified field