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Published July 1970 | public
Journal Article

Physical model for burst noise in semiconductor devices


A physical model for burst noise in p−n junction devices is presented. It is proposed that burst noise results when the current through a defect is modulated by a change in the charge state of a single recombination-generation center located adjacent to the defect. The burst noise amplitude and pulse widths are related to the basic properties of the recombination-generation center and the defect. The model leads to a simple interpretation of the equivalent circuit for diodes which exhibit this type of noise.

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© 1970 Pergamon Press. Received 10 November 1969.

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