Welcome to the new version of CaltechAUTHORS. Login is currently restricted to library staff. If you notice any issues, please email coda@library.caltech.edu
Published January 12, 2015 | Published
Journal Article Open

Ultraviolet surface plasmon-mediated low temperature hydrazine decomposition


Conventional methods require elevated temperatures in order to dissociate high-energy nitrogen bonds in precursor molecules such as ammonia or hydrazine used for nitride film growth. We report enhanced photodissociation of surface-absorbed hydrazine (N_2H_4) molecules at low temperature by using ultraviolet surface plasmons to concentrate the exciting radiation. Plasmonic nanostructured aluminum substrates were designed to provide resonant near field concentration at λ = 248 nm (5 eV), corresponding to the maximum optical cross section for hydrogen abstraction from N_2H_4. We employed nanoimprint lithography to fabricate 1 mm × 1 mm arrays of the resonant plasmonic structures, and ultraviolet reflectance spectroscopy confirmed resonant extinction at 248 nm. Hydrazine was cryogenically adsorbed to the plasmonic substrate in a low-pressure ambient, and 5 eV surface plasmons were resonantly excited using a pulsed KrF laser. Mass spectrometry was used to characterize the photodissociation products and indicated a 6.2× overall enhancement in photodissociation yield for hydrazine adsorbed on plasmonic substrates compared with control substrates. The ultraviolet surface plasmon enhanced photodissociation demonstrated here may provide a valuable method to generate reactive precursors for deposition of nitride thin film materials at low temperatures.

Additional Information

© 2015 AIP Publishing LLC. Received 27 August 2014; accepted 26 December 2014; published online 12 January 2015. This work was supported by DARPA under Grant No. W911NF-13-1-0040 and utilized facilities of the Kavli Nanoscience Institute at Caltech.

Attached Files

Published - 1.4905593.pdf


Files (1.2 MB)
Name Size Download all
1.2 MB Preview Download

Additional details

August 20, 2023
October 19, 2023