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Published May 2001 | Published
Book Section - Chapter Open

A monolithic HEMT diode balanced mixer for 100-140 GHz


We report the design and evaluation of a broadband, balanced mixer for 100-140 GHz using a HEMT MMIC process on a 75 µm InP substrate. The circuit uses Schottky diodes as mixing elements. It demonstrates a conversion loss of 15 ± 2 dB from 100-130 GHz with 5 dBm LO drive at 80 GHz, Measurements indicate a wide IF bandwidth extending beyond 50 GHz. This is the first demonstration of a monolithic HEMT diode balanced mixer in this frequency range.

Additional Information

© 2001 IEEE. The authors wish to express their thanks to the staff of TRW for fabrication of the chip, to Douglas Dawson of JPL for invaluable laboratory assistance, and to Scott Kee, Ichiro Aoki, and Professor David Rutledge of Caltech for advice and discussion. The research described in this paper was carried out in part by the Jet Propulsion Laboratory, California Institute of Technology, under contract with the National Aeronautics and Space Administration through support of the Cross-Enterprise Technology Development and Instrument Incubator Programs.

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