Design and implementation of the next generation electron beam resists for the production of EUVL photomasks
Abstract
A new class of resist materials has been developed that is based on a family of heterometallic rings. The work is founded on a Monte Carlo simulation that utilizes a secondary and Auger electron generation model to design resist materials for high resolution electron beam lithography. The resist reduces the scattering of incident electrons to obtain line structures that have a width of 15 nm on a 40 nm pitch. This comes at the expense of lowering the sensitivity of the resist, which results in the need for large exposure doses. Low sensitivity can be dramatically improved by incorporating appropriate functional alkene groups around the metal-organic core, for example by replacing the pivalate component with a methacrylate molecule. This increases the resist sensitivity by a factor of 22.6 and demonstrates strong agreement between the Monte Carlo simulation and the experimental results. After the exposure and development processes, what remains of the resist material is a metal-oxide that is extremely resistant to silicon dry etch conditions; the etch selectivity has been measured to be 61:1.
Additional Information
© 2018 Society of Photo-optical Instrumentation Engineers (SPIE). We acknowledge the EPSRC(UK) for funding (grant EP/R023158/1). The University of Manchester also supported this work. The authors gratefully acknowledge critical support and infrastructure provided for this work by the Kavli Nanoscience Institute at Caltech.Attached Files
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Additional details
- Eprint ID
- 92345
- Resolver ID
- CaltechAUTHORS:20190117-111919486
- Engineering and Physical Sciences Research Council (EPSRC)
- EP/R023158/1
- University of Manchester
- Kavli Nanoscience Institute
- Created
-
2019-01-17Created from EPrint's datestamp field
- Updated
-
2021-11-16Created from EPrint's last_modified field
- Caltech groups
- Kavli Nanoscience Institute
- Series Name
- Proceedings of SPIE
- Series Volume or Issue Number
- 10810