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Published April 1, 1978 | Published
Journal Article Open

GaAs-GaAIAs injection lasers on semi-insulating substrates using laterally diffused junctions


Low‐threshold GaAs‐GaAlAs lasers operating in a stable single mode have been fabricated using laterally diffused junctions. The lasers are fabricated on semi‐insulating substrates and can be integrated with other components.

Additional Information

© 1978 American Institute of Physics. Received 28 October 1977; accepted for publication 24 January 1978. Online Publication Date: 8 August 2008. Work supported by the Office of Naval Research and the National Science Foundation.

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August 19, 2023
October 18, 2023