Published April 1, 1978
| Published
Journal Article
Open
GaAs-GaAIAs injection lasers on semi-insulating substrates using laterally diffused junctions
- Creators
- Lee, C. P.
- Margalit, S.
- Ury, I.
- Yariv, A.
Abstract
Low‐threshold GaAs‐GaAlAs lasers operating in a stable single mode have been fabricated using laterally diffused junctions. The lasers are fabricated on semi‐insulating substrates and can be integrated with other components.
Additional Information
© 1978 American Institute of Physics. Received 28 October 1977; accepted for publication 24 January 1978. Online Publication Date: 8 August 2008. Work supported by the Office of Naval Research and the National Science Foundation.Attached Files
Published - LEEapl78a.pdf
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Additional details
- Eprint ID
- 32864
- Resolver ID
- CaltechAUTHORS:20120802-083839315
- Office of Naval Research (ONR)
- NSF
- Created
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2012-08-02Created from EPrint's datestamp field
- Updated
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2021-11-09Created from EPrint's last_modified field