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Published June 2000 | Published
Book Section - Chapter Open

Empirical load-line capacitance models for HEMT


Models for describing the gate-source and gate-drain capacitances' variation along a resistive load line have been proposed. They are charge conservative and consistent with the small-signal model at bias points along the load line. The extraction procedure for the models' parameters is fast and intuitive. The models can be implemented easily in most circuit simulator programs.

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© 2000 IEEE.

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