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Published June 1983 | public
Journal Article Open

Semiclassical Theory of Noise in Semiconductor Lasers-Part lI


A model of semiconductor laser noise is presented which includes the carrier density as a dynamical variable and the carrier density dependence of the refractive index. The Van der Pol laser noise model is shown to he a special case of this treatment. Expressions are calculated for all laser spectra and compared with their Van der Pol counterparts. The power fluctuations spectrum and the frequency fluctuations spectrum exhibit a resonance corresponding to the relaxation resonance and the field spectrum contains fine structure, similar to sidebands which result from harmonic frequency modulation of a carrier signal. The role of carrier noise in determining the field spectrum linewidth is also considered.

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© Copyright 1983 IEEE. Reprinted with permission. Manuscript received August 24, 1982;revised January 21, 1983. This work was supported by the National Science Foundation, the Office of Naval Research, and Rockwell International. Special Issue on Semiconductor Lasers, IEEE Journal of Quantum Electronics QE-19(6), June 1983.


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