Published October 16, 1989
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Journal Article
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Direct determination of the ambipolar diffusion length in GaAs/AlGaAs heterostructures by cathodoluminescence
Abstract
A new technique for determining carrier diffusion lengths by cathodoluminescence measurements is presented. The technique is extremely accurate and can be applied to a variety of structures. Ambipolar diffusion lengths are determined for GaAs quantum well material, bulk GaAs, Al0.21Ga0.79As, and Al0.37Ga0.63As. A large increase in the diffusion length is found for Al0.37Ga0.63As and is attributed to an order of magnitude increase in lifetime.
Additional Information
© 1989 American Institute of Physics. Received 21 April 1989; accepted 4 August 1989. The authors would like to acknowledge the support of the Office of Naval Research and the Strategic Defense Initiative Organization/Innovative Science and Technology. One of us (PS) would like to acknowledge the support of a graduate National Science Foundation fellowship.Files
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- CaltechAUTHORS:ZARapl89a
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2008-05-02Created from EPrint's datestamp field
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