Published July 1984
| Version Published
Journal Article
Open
Vertical FET's in GaAs
Abstract
Vertical FET's in GaAlAs material systems have been fabricated. The present structure makes possible extremely short (less than 1000-Å) channel devices which are beyond the reach of optical lithographic processes. Devices with transconductance g_m high as 280 mS/mm have been obtained.
Additional Information
© 1984 IEEE. Manuscript received January 17, 1984; revised March 8, 1984. This work was supported by the office of Naval Research and the NSF (Optical Communication Project).Attached Files
Published - 01484275.pdf
Files
01484275.pdf
Files
(351.2 kB)
| Name | Size | Download all |
|---|---|---|
|
md5:6498f6e66b9cade313a54b36d2a308ae
|
351.2 kB | Preview Download |
Additional details
Identifiers
- Eprint ID
- 79513
- Resolver ID
- CaltechAUTHORS:20170727-162918107
Funding
- Office of Naval Research (ONR)
- NSF
Dates
- Created
-
2017-07-28Created from EPrint's datestamp field
- Updated
-
2021-11-15Created from EPrint's last_modified field