Published June 2014
| public
Book Section - Chapter
A 19.1dBm segmented power-mixer based multi-Gbps mm-Wave transmitter in 32nm SOI CMOS
Abstract
A high-power, fully-integrated, mm-wave power mixer based transmitter capable of generating highspeed, complex non-constant envelope modulations is implemented in a 32nm SOI CMOS process. Segmented power generation approach is shown to be suitable for direct digital modulation as well as efficiency improvement at back-off power levels. The transmitter has a peak output power of 19.1dBm at 51GHz with a drain efficiency of 14.2% and a peak PAE of 10.1%. Measurements results show high-speed modulations for BPSK, QPSK, ASK, m-ASK and 16-QAM. Reliability of the transmitter has also been verified against worst case segmentation at 30% higher supply voltage.
Additional Information
© 2014 IEEE. The authors would like to acknowledge Sanjay Raman formerly of DARPA and Tony Quach of AFRL for support.Additional details
- Eprint ID
- 61024
- DOI
- 10.1109/RFIC.2014.6851737
- Resolver ID
- CaltechAUTHORS:20151013-081934459
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2015-10-15Created from EPrint's datestamp field
- Updated
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2021-11-10Created from EPrint's last_modified field