CaltechAUTHORS
Published March 2012 | Version public
Journal Article Metadata-only

GaAs Passivation with Trioctylphosphine Sulfide for Enhanced Solar Cell Efficiency and Durability

Creators

  • 1. ROR icon California Institute of Technology

Abstract

A chemical passivation strategy to improve durability in GaAs solar cells is described. Trioctylphosphine sulfide (TOP:S) is identified among a promising new class of surfactants for enhanced performance and longevity of GaAs cells. Light-beam induced current measurements (LBIC) and other studies show treatment with TOP:S mitigates efficiency losses at unpassivated sidewalls and induced fractures.

Additional Information

© 2012 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim. Issue published online: 13 Mar. 2012; Article first published online: 7 Feb. 2012; Manuscript Received: 3 Nov. 2011. This work was supported by the Department of Energy under grant DE-FG02-07ER46405 and the DARPA Portable Photovoltaics program. We thank Dr. Brendan Kayes and Alta Devices for providing the GaAs solar cells used in this study.

Additional details

Identifiers

Eprint ID
30382
Resolver ID
CaltechAUTHORS:20120427-142915330

Funding

Department of Energy (DOE)
DE-FG02-07ER46405
Defense Advanced Research Projects Agency (DARPA)

Dates

Created
2012-04-30
Created from EPrint's datestamp field
Updated
2021-11-09
Created from EPrint's last_modified field