Published January 11, 1999
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Journal Article
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Tunnel diodes fabricated from CdSe nanocrystal monolayers
Abstract
A parallel approach for fabricating nanocrystal-based semiconductor–insulator–metal tunnel diodes is presented. The devices consisted of a Au electrode, a monolayer of 38 Å CdSe nanocrystals, an insulating bilayer of eicosanoic acid (C19H39CO2H), and an Al electrode. Each device was approximately 100 µm^2. Conductance measurements at 77 K reveal strong diode behavior and evidence of Coulomb blockade and staircase structure. A single barrier model was found to reproduce the electronic characteristics of these devices.
Additional Information
© 1999 American Institute of Physics. (Received 6 August 1998; accepted 2 November 1998) This work was supported by a NSF-GOALI grant, the David and Lucile Packard Foundation, and the Alfred P. Sloan Foundation.Attached Files
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Additional details
Identifiers
- Eprint ID
- 5593
- Resolver ID
- CaltechAUTHORS:KIMapl99
Funding
- NSF
- David and Lucile Packard Foundation
- Alfred P. Sloan Foundation
Dates
- Created
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2006-10-25Created from EPrint's datestamp field
- Updated
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2021-11-08Created from EPrint's last_modified field