Published August 4, 2003
| Published
Journal Article
Open
Hydrogenation of Si from SiNx(H) films: Characterization of H introduced into the Si
Abstract
A promising method to introduce H into multicrystalline Si solar cells in order to passivate bulk defects is by the postdeposition annealing of a H-rich, SiNx surface layer. It has previously been difficult to characterize the small concentration of H that is introduced by this method. Infrared spectroscopy has been used together with marker impurities in the Si to determine the concentration and depth of H introduced into Si from an annealed SiNx film.
Additional Information
© 2003 American Institute of Physics. Received 12 May 2003; accepted 17 June 2003. The authors thank Mark Rosenblum for his assistance with their experiments. Work performed at Lehigh University was supported by NREL Contract No. AAT-1-31606-04 and NSF Grant No. DMR-0108914.Attached Files
Published - JIAapl03.pdf
Files
JIAapl03.pdf
Files
(55.6 kB)
| Name | Size | Download all |
|---|---|---|
|
md5:3b28ca04e6df29228f34857849d3abb9
|
55.6 kB | Preview Download |
Additional details
- Eprint ID
- 1677
- Resolver ID
- CaltechAUTHORS:JIAapl03
- AAT-1-31606-04
- National Renewable Energy Laboratory
- DMR-0108914
- NSF
- Created
-
2006-02-10Created from EPrint's datestamp field
- Updated
-
2023-06-01Created from EPrint's last_modified field