CaltechAUTHORS
Published August 4, 2003 | Version Published
Journal Article Open

Hydrogenation of Si from SiNx(H) films: Characterization of H introduced into the Si

Creators

  • 1. ROR icon Lehigh University
  • 2. ROR icon Georgia Institute of Technology
  • 3. ROR icon California Institute of Technology

Abstract

A promising method to introduce H into multicrystalline Si solar cells in order to passivate bulk defects is by the postdeposition annealing of a H-rich, SiNx surface layer. It has previously been difficult to characterize the small concentration of H that is introduced by this method. Infrared spectroscopy has been used together with marker impurities in the Si to determine the concentration and depth of H introduced into Si from an annealed SiNx film.

Additional Information

© 2003 American Institute of Physics. Received 12 May 2003; accepted 17 June 2003. The authors thank Mark Rosenblum for his assistance with their experiments. Work performed at Lehigh University was supported by NREL Contract No. AAT-1-31606-04 and NSF Grant No. DMR-0108914.

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Additional details

Identifiers

Eprint ID
1677
Resolver ID
CaltechAUTHORS:JIAapl03

Funding

National Renewable Energy Laboratory
AAT-1-31606-04
NSF
DMR-0108914

Dates

Created
2006-02-10
Created from EPrint's datestamp field
Updated
2023-06-01
Created from EPrint's last_modified field