Welcome to the new version of CaltechAUTHORS. Login is currently restricted to library staff. If you notice any issues, please email coda@library.caltech.edu
Published May 15, 1993 | public
Journal Article Open

The extraordinary Hall effect in coherent epitaxial tau (Mn,Ni)Al thin films on GaAs


Ultrathin coherent epitaxial films of ferromagnetic tau(Mn,Ni)0.60Al0.40 have been grown by molecular beam epitaxy on GaAs substrates. X-ray scattering and cross-sectional transmission electron microscopy measurements confirm that the c axis of the tetragonal tau unit cell is aligned normal to the (001) GaAs substrate. Measurements of the extraordinary Hall effect (EHE) show that the films are perpendicularly magnetized, exhibiting EHE resistivities saturating in the range of 3.3-7.1 muOMEGA-cm at room temperature. These values of EHE resistivity correspond to signals as large as +7 and -7 mV for the two magnetic states of the film with a measurement current of 1 mA. Switching between the two magnetic states is found to occur at distinct field values that depend on the previously applied maximum field. These observations suggest that the films are magnetically uniform. As such, tau(Mn,Ni)Al films may be an excellent medium for high-density storage of binary information.

Additional Information

Copyright © 1993 American Institute of Physics. The authors acknowledge S. J. Allen, Jr. and M. Leadbeater for their many contributions to the early stages of this work. Also, Rutherford backscattering data from B. J. Wilkens helped to calibrate film thicknesses and compositions. One of the authors (JDB) acknowledges NATO for financial assistance.


Files (482.4 kB)
Name Size Download all
482.4 kB Preview Download

Additional details

August 22, 2023
March 5, 2024