Published November 27, 2008 | Version public
Journal Article

Charge Transport through Polyene Self-Assembled Monolayers from Multiscale Computer Simulations

  • 1. ROR icon California Institute of Technology
  • 2. ROR icon Georgia Institute of Technology
  • 3. ROR icon University of Seoul

Abstract

We combine first-principles density-functional theory with matrix Green's function calculations to predict the structures and charge transport characteristics of self-assembled monolayers (SAMs) of four classes of systems in contact with Au(111) electrodes: conjugated polyene chains (n = 4, 8, 12, 16, and 30) thiolated at one or both ends and saturated alkane chains (n = 4, 8, 12, and 16) thiolated at one or both ends. For the polyene SAMs, we find no decay in the current as a function of chain length and conclude that these 1−3 nm long polyene SAMs act as metallic wires. We also find that the polyene-monothiolate leads to a contact resistance only 2.8 times higher than that for the polyene-dithiolate chains, indicating that the device conductance is dominated by the properties of the molecular connector with less importance in having a second molecule−electrode contact. For the alkane SAMs, we observe the normal exponential decay in the current as a function of the chain length with a decay constant of βn = 0.82 for the alkane-monothiolate and 0.88 for the alkane-dithiolate. We find that the contact resistance for the alkane-monothiolate is 12.5 times higher than that for the alkane-dithiolate chains, reflecting the extra resistance due to the weak contact on the nonthiolated end. These contrasting charge transport characteristics of alkane and polyene SAMs and their contact dependence are explained in terms of the atomic projected density of states.

Additional Information

© 2008 American Chemical Society. Received: March 21, 2006; Revised Manuscript Received: July 9, 2008. Publication Date (Web): October 23, 2008. C.G. was supported primarily by the MRSEC Program of the National Science Foundation under Award No. DMR-0080065 (Caltech). S.S.J. and W.A.G. were supported by NSF CCF-0524490, MARCO FENA, and Intel Component Research. The computational facilities of the MSC were also supported by ONR-DURIP and ARO-DURIP. Y.-H.K. was supported by the Korea Research Foundation (Grant No. KRF-2007-331-C00077) and the Korea Science and Engineering Foundation (Grant No. 2008-02807). Most calculations were performed by using the supercomputing resource of the Korea Institute of Science and Technology (KISTI).

Additional details

Identifiers

Eprint ID
12770
Resolver ID
CaltechAUTHORS:GEOjpcb08

Funding

NSF
DMR-0080065
NSF
CCF-0524490
Microelectronics Advanced Research Corporation (MARCO)
Intel Component Research
Office of Naval Research (ONR)
Army Research Office (ARO)
National Research Foundation of Korea
KRF-2007-331-C00077
Korea Science and Engineering Foundation
2008-02807

Dates

Created
2008-12-23
Created from EPrint's datestamp field
Updated
2021-11-08
Created from EPrint's last_modified field