A W-band monolithic medium power amplifier
This paper summarizes the design and measured performance of a MMIC power amplifier for W-band. The chip was fabricated on a 50 µm GaAs substrate using 0.1 µm AlGaAs/InGaAs/GaAs pseudomorphic-HEMT technology. Measurements show that it has small-signal gain of 19±1 dB from 72 to 95 GHz. During scalar measurements with moderate heat-sinking, the chip delivered more than 100 mW between 75 and 93 GHz, with a corresponding large signal gain of 11 dB. Such an amplifier is widely useful in millimeter-wave applications requiring moderately high power over broad frequency ranges, including emerging wireless communication systems in W-band.
Additional Information© 2003 IEEE. The authors wish to thank the staff of TRW for fabrication of the MMIC PA. We also thank Alex Peralta at JPL for S-parameter measurements and to Dr. Dave Rutledge of Caltech for advice and discussion. The research described in this paper was carried out in part by the Jet Propulsion Laboratory, California Institute of Technology, under contract with the National Aeronautics and Space Administration.
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