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Published January 29, 1996 | Published
Journal Article Open

Synthesis of epitaxial SnxGe1–x alloy films by ion-assisted molecular beam epitaxy


In this letter, we report the synthesis of epitaxial SnxGe1–x/Ge/Si(001) with compositions up to x=0.34 by ion-assisted molecular beam epitaxy with 30–100 eV Ar+ ions produced by an electron cyclotron resonance ionization source with ion to atom flux ratios of the order of unity in the substrate temperature range of 120–200 °C. High flux low energy ion beam irradiation greatly inhibits Sn segregation without interrupting epitaxy.

Additional Information

© 1996 American Institute of Physics. (Received 12 July 1995; accepted 21 November 1995) This work was supported by the National Science Foundation under Grant No. DMR-9503210. We also acknowledge the expert technical assistance of M. Easterbrook and C. M. Garland.

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