Control of carbon nanotube morphology by change of applied bias field during growth
Abstract
Carbon nanotube morphology has been engineered via simple control of applied voltage during dc plasma chemical vapor deposition growth. Below a critical applied voltage, a nanotube configuration of vertically aligned tubes with a constant diameter is obtained. Above the critical voltage, a nanocone-type configuration is obtained. The strongly field-dependent transition in morphology is attributed primarily to the plasma etching and decrease in the size of nanotube-nucleating catalyst particles. A two-step control of applied voltage allows a creation of dual-structured nanotube morphology consisting of a broad base nanocone (~200 nm dia.) with a small diameter nanotube (~7 nm) vertically emanating from the apex of the nanocone, which may be useful for atomic force microscopy.
Additional Information
©2004 American Institute of Physics. (Received 8 July 2004; accepted 21 October 2004) The authors acknowledge the support of the work by University of California Discovery Fund under Grant No. ele02-10133/Jin, NSF NIRTs under Grant Nos. DMI-0210559 and DMI-0303790, and Lawrence Livermore National Laboratory under Grant No. MI-04-006.Attached Files
Published - CHEapl04.pdf
Files
CHEapl04.pdf
Files
(365.5 kB)
| Name | Size | Download all |
|---|---|---|
|
md5:64475e20b5c990a3642a162eeeaa1f5b
|
365.5 kB | Preview Download |
Additional details
Identifiers
- Eprint ID
- 5095
- Resolver ID
- CaltechAUTHORS:CHEapl04
Funding
- UC DIscovery Fund
- ele02-10133/Jin
- NSF
- DMI-0210559
- NSF
- DMI-0303790
- Lawrence Livermore National Laboratory
- MI-04-006
Dates
- Created
-
2006-09-28Created from EPrint's datestamp field
- Updated
-
2021-11-08Created from EPrint's last_modified field